Kinetics of synthesis of silicon carbide by carbothermal reduction of silicon dioxide

2000 ◽  
Vol 99 (2) ◽  
pp. 57-62 ◽  
Author(s):  
C.Y. Chen ◽  
C.I. Lin ◽  
S.H. Chen
Keyword(s):  
Silicon Carbide ◽  
Silicon Dioxide ◽  
Carbothermal Reduction ◽  
Kinetics Of

Kinetics of carbothermal reduction synthesis of beta silicon carbide

AIChE Journal ◽  
1993 ◽  
Vol 39 (3) ◽  
pp. 493-503 ◽  
Author(s):  
Alan W. Weimer ◽  
Kevin J. Nilsen ◽  
Gene A. Cochran ◽  
Raymond P. Roach
Keyword(s):  
Silicon Carbide ◽  
Carbothermal Reduction ◽  
Kinetics Of

Irradiation behavior of pyrolytic silicon carbide

1983 ◽  
Vol 41 ◽  
pp. 72-73
Author(s):  
R. J. Lauf
Keyword(s):  
Silicon Carbide ◽  
Fission Products ◽  
Thermodynamics And Kinetics ◽  
Neutron Fluences ◽  
Fuel Particles ◽  
Sic Coatings ◽  
Irradiation Behavior ◽  
Kinetics Of ◽  
Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

Reordering and Crystallization of Silicon Carbide Amorphized by Neutron Irradiation

2000 ◽  
Vol 650 ◽  
Author(s):  
Lance L. Snead ◽  
Martin Balden
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Crystallization Kinetics ◽  
Neutron Irradiation ◽  
Onset Temperature ◽  
Kinetics Of Crystallization ◽  
Crystallization Onset Temperature ◽  
Crystallization Onset ◽  
Kinetics Of

ABSTRACTDensification and crystallization kinetics of bulk SiC amorphized by neutron irradiation is studied. The temperature of crystallization onset of this highly pure, fully amorphous bulk SiC was found to be between 875-885°C and crystallization is nearly complete by 950°C. In-situ TEM imaging confirms the onset of crystallization, though thin-film effects apparently alter the kinetics of crystallization above this temperature. It requires >1125°C for complete crystallization of the TEM foil. Annealing at temperatures between the irradiation and crystallization onset temperature is seen to cause significant densification attributed to a relaxation, or reordering, of the as-amorphized structure.

scholarly journals Development and characterization of silicon dioxide clad silicon carbide optics for terrestrial and space applications

2021 ◽  
Author(s):  
Tayaramma D.P.V. Jalluri ◽  
Girish M. Gouda ◽  
Arjun Dey ◽  
B. Rudraswamy ◽  
K.V. Sriram
Keyword(s):  
Silicon Carbide ◽  
Silicon Dioxide ◽  
Space Applications

Kinetics of the silicon dioxide growth process in afterglows of microwave‐induced plasmas

1987 ◽  
Vol 62 (4) ◽  
pp. 1450-1458 ◽  
Author(s):  
C. Vinckier ◽  
P. Coeckelberghs ◽  
G. Stevens ◽  
M. Heyns ◽  
S. De Jaegere
Keyword(s):  
Silicon Dioxide ◽  
Growth Process ◽  
Kinetics Of
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