Effect of interfacial oxide on solid‐phase epitaxy of Si films deposited on Si substrates

ABSTRACTLateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films vacuum-evaporated on Si substrates with SiO2 patterns has been investigated, in which the film first grows vertically in the regions directly contacted to the Si substrates and then grows laterally onto SiO2 patterns. It has been found from transmission electron microscopy and Nomarski optical microscopy that use of dense a-Si films, which are formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, is essentially important for L-SPE. The maximum L-SPE length of 5–6μm was obtained along the <010> direction after 10hourannealing at 600°C. The kinetics of the L-SPE growth has also been investigated.

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Reduction of Ca and F Segregated at the Surface of a Si/CaF2/Si(100) Structure By Solid Phase Epitaxy of Si

MRS Proceedings ◽

10.1557/proc-53-149 ◽

1985 ◽

Vol 53 ◽

Cited By ~ 7

Author(s):

Masayoshi Sasaki ◽

Hiroshi Onoda ◽

Norio Hirashita

Keyword(s):

Molecular Beam ◽

Solid Phase ◽

High Energy ◽

Solid Phase Epitaxy ◽

Si Substrates ◽

Segregation Effect ◽

Order Of Magnitude ◽

Amorphous Si ◽

Si Epitaxy ◽

Si Films

ABSTRACTEpitaxial Si films have been grown on single crystalline CaF2 on (l00)Si substrates by molecular beam epitaxy(MBE) or combination of MBE and solid phase epitaxy(SPE) of deposited amorphous Si(a-Si). It has been found that Ca and F segregate at the surface of the Si grown by MBE. The high energy electron diffraction (RHEED) patterns from the Si surface show the superstructures which are caused by the existence of Ca and F at the Si surface. To reduce the segregation effect, SPE process has been successfully applied to Si epitaxy. The Si SPE performed on top of the MBE Si layer reduces the Ca concentration at the Si surface by an order of magnitude, although the segregation effect is not completely suppressed.

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Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2patterns

Applied Physics Letters ◽

10.1063/1.94217 ◽

1983 ◽

Vol 43 (11) ◽

pp. 1028-1030 ◽

Cited By ~ 58

Author(s):

Hiroshi Ishiwara ◽

Hiroshi Yamamoto ◽

Seijiro Furukawa ◽

Masao Tamura ◽

Takashi Tokuyama

Keyword(s):

Solid Phase ◽

Solid Phase Epitaxy ◽

Si Substrates ◽

Amorphous Si ◽

Si Films

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Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure

10.7567/ssdm.1992.a-1-4 ◽

1992 ◽

Author(s):

H. Ishiwara ◽

H. Wakabayashi ◽

K. Miyazaki ◽

K. Fukao ◽

A. Sawaoka

Keyword(s):

Solid Phase ◽

Ultrahigh Pressure ◽

Solid Phase Epitaxy ◽

Amorphous Si ◽

Si Films

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Polycrystalline Si Films Fabricated by Low Temperature Selective Nucleation and Solid Phase Epitaxy Process

MRS Proceedings ◽

10.1557/proc-485-67 ◽

1997 ◽

Vol 485 ◽

Cited By ~ 3

Author(s):

Claudine M. Chen ◽

Harry A. Atwater

Keyword(s):

Thin Film ◽

Grain Size ◽

Crystal Growth ◽

Incubation Time ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Grain Sizes ◽

Random Nucleation ◽

Nucleation Sites ◽

Si Films

AbstractWith a selective nucleation and solid phase epitaxy (SNSPE) process, grain sizes of 10 μm have been achieved to date at 620°C in 100 nrm thick silicon films on amorphous SiO2, with potential for greater grain sizes. Selective nucleation occurs via a thin film reaction between a patterned array of 20 rnm thick indium islands which act as heterogeneous nucleation sites on the amorphous silicon starting material. Crystal growth proceeds by lateral solid phase epitaxy from the nucleation sites, during the incubation time for random nucleation. The largest achievable grain size by SNSPE is thus approximately the product of the incubation time and the solid phase epitaxy rate. Electronic dopants, such as B, P, and Al, are found to enhance the solid phase epitaxy rate and affect the nucleation rate.

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