Reduction of Ca and F Segregated at the Surface of a Si/CaF2/Si(100) Structure By Solid Phase Epitaxy of Si

1985 ◽  
Vol 53 ◽  
Author(s):  
Masayoshi Sasaki ◽  
Hiroshi Onoda ◽  
Norio Hirashita
Keyword(s):  
Molecular Beam ◽  
Solid Phase ◽  
High Energy ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Segregation Effect ◽  
Order Of Magnitude ◽  
Amorphous Si ◽  
Si Epitaxy ◽  
Si Films

ABSTRACTEpitaxial Si films have been grown on single crystalline CaF2 on (l00)Si substrates by molecular beam epitaxy(MBE) or combination of MBE and solid phase epitaxy(SPE) of deposited amorphous Si(a-Si). It has been found that Ca and F segregate at the surface of the Si grown by MBE. The high energy electron diffraction (RHEED) patterns from the Si surface show the superstructures which are caused by the existence of Ca and F at the Si surface. To reduce the segregation effect, SPE process has been successfully applied to Si epitaxy. The Si SPE performed on top of the MBE Si layer reduces the Ca concentration at the Si surface by an order of magnitude, although the segregation effect is not completely suppressed.

Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2patterns on Si substrates

1986 ◽  
Vol 48 (12) ◽  
pp. 773-775 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Akihiro Tamba ◽  
Seijiro Furukawa
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Amorphous Si ◽  
Si Films

Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns

1983 ◽  
Vol 25 ◽  
Author(s):  
H. Yamamoto ◽  
H. Ishiwara ◽  
S. Furukawa ◽  
M. Tamura ◽  
T. Tokuyama
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Si Films ◽  
Kinetics Of

ABSTRACTLateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films vacuum-evaporated on Si substrates with SiO2 patterns has been investigated, in which the film first grows vertically in the regions directly contacted to the Si substrates and then grows laterally onto SiO2 patterns. It has been found from transmission electron microscopy and Nomarski optical microscopy that use of dense a-Si films, which are formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, is essentially important for L-SPE. The maximum L-SPE length of 5–6μm was obtained along the <010> direction after 10hourannealing at 600°C. The kinetics of the L-SPE growth has also been investigated.

Suppression of Surface SiO2 Layer and Solid Phase Epitaxy of Amorphously Deposited Si Films using Heating-Up Under Si2H6 Environment

1996 ◽  
Vol 448 ◽  
Author(s):  
Tae-Hee Choe ◽  
Se-June Kim ◽  
Woon Choi ◽  
Hyoung-June Kim
Keyword(s):  
Epitaxial Layer ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Layer Formation ◽  
Lateral Overgrowth ◽  
Cleaning Procedures ◽  
Amorphous Si ◽  
Si Epitaxy ◽  
Si Films ◽  
Heating Up

AbstractA novel technique to realize a selectively grown Si epitaxy layer has been developed. This technique consists of deposition of amorphous Si with oxide-free Si surface, selective solid phase epitaxial (SPE) growth on Si windows, and etching of uncrystallized amorphous Si on SiO2 layer. Formation of surface oxide can be effectively suppressed by flowing Si2H6 gas during heating-up stage to the deposition temperature. This method enables us to grow epitaxial layer without any high temperature cleaning procedures. Substantially higher growth rate of vertical SPE on Si windows over lateral SPE on SiO2 regions allows the growth of thick SPE layer with a minimized lateral overgrowth. With a proper etching solution, the remaining amorphous Si on SiO2 layer can be readily etched to form a selectively defined epitaxial layer on Si windows.

Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2patterns

1983 ◽  
Vol 43 (11) ◽  
pp. 1028-1030 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Hiroshi Yamamoto ◽  
Seijiro Furukawa ◽  
Masao Tamura ◽  
Takashi Tokuyama
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Amorphous Si ◽  
Si Films

Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure

1992 ◽  
Author(s):  
H. Ishiwara ◽  
H. Wakabayashi ◽  
K. Miyazaki ◽  
K. Fukao ◽  
A. Sawaoka
Keyword(s):  
Solid Phase ◽  
Ultrahigh Pressure ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Si Films

Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films

1985 ◽  
Vol 24 (Part 2, No. 7) ◽  
pp. L513-L515 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Akihiro Tamba ◽  
Hiroshi Yamamoto ◽  
Seijiro Furukawa
Keyword(s):  
Solid Phase ◽  
Boron Doping ◽  
Solid Phase Epitaxy ◽  
Doping Effects ◽  
Amorphous Si ◽  
Si Films

Effect of interfacial oxide on solid‐phase epitaxy of Si films deposited on Si substrates

1988 ◽  
Vol 63 (4) ◽  
pp. 1065-1069 ◽  
Author(s):  
I. Mizushima ◽  
H. Kuwano ◽  
T. Hamasaki ◽  
T. Yoshii ◽  
M. Kashiwagi
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Si Films

Segregation and Trapping of Erbium in Silicon at a Crystal-Amorphous or Crystal-Vacuum Interface

1996 ◽  
Vol 422 ◽  
Author(s):  
A. Polman ◽  
R. Serna ◽  
J. S. Custer ◽  
M. Lohmeier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Growth Model ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Kinetic Growth ◽  
Vacuum Interface ◽  
Amorphous Si

AbstractThe incorporation of erbium in silicon is studied during solid phase epitaxy (SPE) of Erimplanted amorphous Si on crystalline Si, and during Si molecular beam epitaxy (MBE). Segregation and trapping of Er is observed on Si(100), both during SPE and MBE. The trapping during SPE shows a discontinuous dependence on Er concentration, attributed to the effect of defect trap sites in the amorphous Si near the interface. Trapping during MBE is described by a continuous kinetic growth model. Above a critical Er density (which is lower for MBE than for SPE), growth instabilities occur, attributed to the formation of silicide precipitates. No segregation occurs during MBE on Si(111), attributed to the epitaxial growth of silicide precipitates.

Lateral Solid Phase Epitaxy of Amorphous Si Films onto Non-planar SiO2 Patterns

1985 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Akihiro Tamba ◽  
Seijiro Furukawa
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Si Films
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