Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2patterns

1983 ◽  
Vol 43 (11) ◽  
pp. 1028-1030 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Hiroshi Yamamoto ◽  
Seijiro Furukawa ◽  
Masao Tamura ◽  
Takashi Tokuyama
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Amorphous Si ◽  
Si Films

Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2patterns on Si substrates

1986 ◽  
Vol 48 (12) ◽  
pp. 773-775 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Akihiro Tamba ◽  
Seijiro Furukawa
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Amorphous Si ◽  
Si Films

Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns

1983 ◽  
Vol 25 ◽  
Author(s):  
H. Yamamoto ◽  
H. Ishiwara ◽  
S. Furukawa ◽  
M. Tamura ◽  
T. Tokuyama
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Si Films ◽  
Kinetics Of

ABSTRACTLateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films vacuum-evaporated on Si substrates with SiO2 patterns has been investigated, in which the film first grows vertically in the regions directly contacted to the Si substrates and then grows laterally onto SiO2 patterns. It has been found from transmission electron microscopy and Nomarski optical microscopy that use of dense a-Si films, which are formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, is essentially important for L-SPE. The maximum L-SPE length of 5–6μm was obtained along the <010> direction after 10hourannealing at 600°C. The kinetics of the L-SPE growth has also been investigated.

Reduction of Ca and F Segregated at the Surface of a Si/CaF2/Si(100) Structure By Solid Phase Epitaxy of Si

1985 ◽  
Vol 53 ◽  
Author(s):  
Masayoshi Sasaki ◽  
Hiroshi Onoda ◽  
Norio Hirashita
Keyword(s):  
Molecular Beam ◽  
Solid Phase ◽  
High Energy ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Segregation Effect ◽  
Order Of Magnitude ◽  
Amorphous Si ◽  
Si Epitaxy ◽  
Si Films

ABSTRACTEpitaxial Si films have been grown on single crystalline CaF2 on (l00)Si substrates by molecular beam epitaxy(MBE) or combination of MBE and solid phase epitaxy(SPE) of deposited amorphous Si(a-Si). It has been found that Ca and F segregate at the surface of the Si grown by MBE. The high energy electron diffraction (RHEED) patterns from the Si surface show the superstructures which are caused by the existence of Ca and F at the Si surface. To reduce the segregation effect, SPE process has been successfully applied to Si epitaxy. The Si SPE performed on top of the MBE Si layer reduces the Ca concentration at the Si surface by an order of magnitude, although the segregation effect is not completely suppressed.

Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure

1992 ◽  
Author(s):  
H. Ishiwara ◽  
H. Wakabayashi ◽  
K. Miyazaki ◽  
K. Fukao ◽  
A. Sawaoka
Keyword(s):  
Solid Phase ◽  
Ultrahigh Pressure ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Si Films

Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films

1985 ◽  
Vol 24 (Part 2, No. 7) ◽  
pp. L513-L515 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Akihiro Tamba ◽  
Hiroshi Yamamoto ◽  
Seijiro Furukawa
Keyword(s):  
Solid Phase ◽  
Boron Doping ◽  
Solid Phase Epitaxy ◽  
Doping Effects ◽  
Amorphous Si ◽  
Si Films

Effect of interfacial oxide on solid‐phase epitaxy of Si films deposited on Si substrates

1988 ◽  
Vol 63 (4) ◽  
pp. 1065-1069 ◽  
Author(s):  
I. Mizushima ◽  
H. Kuwano ◽  
T. Hamasaki ◽  
T. Yoshii ◽  
M. Kashiwagi
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Si Films

Lateral Solid Phase Epitaxy of Amorphous Si Films onto Non-planar SiO2 Patterns

1985 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Akihiro Tamba ◽  
Seijiro Furukawa
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Si Films

Growth Conditions of Evaporated Amorphous Si Films onto SiO2, Patterns by Lateral Solid Phase Epitaxy

1983 ◽  
Author(s):  
Hiroshi Yamamoto ◽  
Hiroshi Ishiwara ◽  
Seijiro Furukawa ◽  
Masao Tamura ◽  
Takashi Tokuyama
Keyword(s):  
Solid Phase ◽  
Growth Conditions ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Si Films

Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure

1993 ◽  
Vol 32 (Part 1, No. 1B) ◽  
pp. 308-311 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Hitoshi Wakabayashi ◽  
Keizo Miyazaki ◽  
Kazuichi Fukao ◽  
Akira Sawaoka
Keyword(s):  
Solid Phase ◽  
Ultrahigh Pressure ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Si Films
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