Device applications of vanadium‐doped silicon‐dioxide

1989 ◽  
Vol 65 (10) ◽  
pp. 4082-4084 ◽  
Author(s):  
J. J. DeLima ◽  
A. J. Snell ◽  
K. V. Krishna ◽  
A. E. Owen ◽  
A. Hawryliw ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Doped Silicon ◽  
Device Applications

EFM Study on Ge Island: Carrier Charge and Storage Effect

2010 ◽  
Vol 1260 ◽  
Author(s):  
Zhen Lin ◽  
Pavel Brunkov ◽  
Xueying Ma ◽  
Franck Bassani ◽  
Georges Bremond
Keyword(s):  
Silicon Dioxide ◽  
Electrostatic Force ◽  
Storage Effect ◽  
Silicon Dioxide Layer ◽  
Conductive Material ◽  
Doped Silicon ◽  
Charge Decay ◽  
Memory Applications ◽  
Carrier Charge ◽  
And Storage

AbstractIn this paper, individual Ge nano island on top of a silicon dioxide layer of thermally grown on a n+ type doped silicon (001) substrate have been studied. The charging ability of an individual Ge island was evaluated by EFM two-pass lift mode measurement. Such Ge nano island becomes an iso-potential and behaves as a conductive material after being charged. These charges were directly injected and were trapped homogenous in the isolated Ge island. It is also shown that the dominant charge decay mechanism during discharging of nc-Ge is related to the leakage of these trapped charges. Further more, the retention time of these trapped charges was evaluated and the electrostatic force was also studied by using different tip bias during scan. Such a study should be very useful to the Ge-nc in memory applications.

Low Temperature Oxide Deposition Equipment

1977 ◽  
Vol 14 (2) ◽  
pp. 125-128
Author(s):  
T. E. Price
Keyword(s):  
Low Temperature ◽  
Silicon Dioxide ◽  
Chemical Reactions ◽  
Oxide Deposition ◽  
Device Applications ◽  
Temperature Oxide

The equipment described uses silane to deposit silicon dioxide at 400°C on to a substrate 50 mm in diameter; the oxide may be doped with phosphorus or boron. Details are given of the chemical reactions involved, the construction and operation together with some examples of possible device applications.

IR and RBS studies of RF sputtered films of vanadium doped silicon dioxide

1987 ◽  
Vol 90 (1-3) ◽  
pp. 291-294 ◽  
Author(s):  
J.J. Delima ◽  
A.J. Snell ◽  
K.V. Krishna ◽  
A.E. Owen
Keyword(s):  
Silicon Dioxide ◽  
Sputtered Films ◽  
Doped Silicon

Thermoluminescence Response of Ytterbium-Doped Silicon Dioxide Fiber

2015 ◽  
Vol 49 (4) ◽  
pp. 265-268
Author(s):  
M. A. Saeed ◽  
N. F. Abdul Pattah ◽  
I. Hossain ◽  
H. Wagiran
Keyword(s):  
Silicon Dioxide ◽  
Doped Silicon

Plasmochemical synthesis of thin layers of the sulfur doped silicon dioxide

2009 ◽  
Vol 79 (2) ◽  
pp. 184-185
Author(s):  
R. G. Mirskov ◽  
V. I. Rakhlin ◽  
S. N. Adamovich ◽  
M. G. Voronkov
Keyword(s):  
Silicon Dioxide ◽  
Thin Layers ◽  
Doped Silicon

Thermoluminescence response of ytterbium-doped silicon dioxide fiber

2015 ◽  
Vol 49 (4) ◽  
pp. 234-236 ◽  
Author(s):  
M. A. Saeed ◽  
N. F. Abdul Pattah ◽  
I. Hossain ◽  
H. Wagiran
Keyword(s):  
Silicon Dioxide ◽  
Doped Silicon

Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals

2005 ◽  
Vol 86 (15) ◽  
pp. 151914 ◽  
Author(s):  
A. Nazarov ◽  
J. M. Sun ◽  
W. Skorupa ◽  
R. A. Yankov ◽  
I. N. Osiyuk ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Nanocrystals ◽  
Light Emission ◽  
Charge Trapping ◽  
Silicon Dioxide Films ◽  
Doped Silicon ◽  
Er Doped
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