Monte Carlo determination of femtosecond dynamics of hot‐carrier relaxation and scattering processes in bulk GaAs

1990 ◽  
Vol 67 (12) ◽  
pp. 7399-7403 ◽  
Author(s):  
Xing Zhou ◽  
Thomas Y. Hsiang
Keyword(s):  
Monte Carlo ◽  
Carrier Relaxation ◽  
Bulk Gaas ◽  
Hot Carrier ◽  
Femtosecond Dynamics

Hot-carrier relaxation in quantum well and bulk GaAs at high carrier densities: femtoseconds to nanoseconds

1992 ◽  
Author(s):  
Wayne S. Pelouch ◽  
Randy J. Ellingson ◽  
Peter E. Powers ◽  
Chung L. Tang ◽  
Dean H. Levi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Relaxation ◽  
Bulk Gaas ◽  
Hot Carrier ◽  
High Carrier

Investigation of hot-carrier relaxation in quantum well and bulk GaAs at high carrier densities

1992 ◽  
Vol 7 (3B) ◽  
pp. B337-B339 ◽  
Author(s):  
W S Pelouch ◽  
R J Ellingson ◽  
P E Powers ◽  
C L Tang ◽  
D M Szmyd ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Relaxation ◽  
Bulk Gaas ◽  
Hot Carrier ◽  
High Carrier

Comparison of hot-carrier relaxation in quantum wells and bulk GaAs at high carrier densities

1992 ◽  
Vol 45 (3) ◽  
pp. 1450-1453 ◽  
Author(s):  
W. S. Pelouch ◽  
R. J. Ellingson ◽  
P. E. Powers ◽  
C. L. Tang ◽  
D. M. Szmyd ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Relaxation ◽  
Bulk Gaas ◽  
Hot Carrier ◽  
High Carrier

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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