Amorphization and solid‐phase epitaxial growth in tin‐ion‐implanted gallium arsenide

1990 ◽  
Vol 67 (9) ◽  
pp. 4036-4041 ◽  
Author(s):  
Masafumi Taniwaki ◽  
Hideto Koide ◽  
Naoto Yoshimoto ◽  
Toshimasa Yoshiie ◽  
Somei Ohnuki ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Ion Implanted

Transient and Furnace Annealing of Ion Implanted Gallium Arsenide

1980 ◽  
Vol 1 ◽  
Author(s):  
J. S. Williams ◽  
H. B. Harrison
Keyword(s):  
Gallium Arsenide ◽  
Solid Phase ◽  
Pulsed Lasers ◽  
Physical Processes ◽  
Furnace Annealing ◽  
Annealing Behaviour ◽  
Cw Laser ◽  
Similarities And Differences ◽  
Solid Phase Regrowth ◽  
Ion Implanted

ABSTRACTThis review examines the annealing behaviour of ion implanted gallium arsenide during furance, laser and e-beam processing.The two annealing regimes, namely solid phase regrowth via furnace or CW laser/e-beam annealing and liquid phase epitaxy produced by pulsed lasers/e-beam, are examined in some detail.Emphasis is placed upon an understanding of the physical processes which are important during the various annealing modes.Comparison with the annealing behaviour of ion implantedelemental semiconductors(notably silicon) is made throughout the review to highlight relevant similarities and differences between compound and elemental semiconductors.The electrical properties of annealed gallium arsenide layers are not treatedin any detail, although particular observations which are relevant to the annealing processes are briefly discussed.

Non-planar solid phase epitaxial growth processes in ion-implanted GaAs

1982 ◽  
Vol 93 (1-2) ◽  
pp. 179-184 ◽  
Author(s):  
J.S. Williams ◽  
F.M. Adams ◽  
K.G. Rossiter
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Growth Processes ◽  
Ion Implanted

Non-Planar Solid Phase Epitaxial Growth Processes in Ion-Implanted GaAs

1981 ◽  
Vol 10 ◽  
Author(s):  
J. S. Williams ◽  
F. M. Adams ◽  
K. G. Rossiter
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Surface Crystallization ◽  
Growth Interface ◽  
Near Surface ◽  
Epitaxial Regrowth ◽  
Reflection Electron Diffraction ◽  
Ion Implanted

High resolution ion channelling and reflection electron diffraction techniques have been used to examine details of epitaxial regrowth in Ar+-ion-implanted GaAs(100) at furnace anneal temperatures of 400°C or less. In particular, we have investigated the nature and extent of epitaxial regrowth during both isothermal and isochronal annealing for various implant energies and for implant doses above and below the amorphous threshold. Our results indicate the development of a nonplanar growth interface during annealing which may lead, ultimately, to complex near-surface crystallization processes. Consistently with our observations and recent results from other laboratories, we propose a model for the epitaxial regrowth of amorphous GaAs layers based upon non-uniform growth rates along the amorphous-crystalline interface which could arise from local stoichiometry imbalance.

Transient Annealing of Ion Implanted Gallium Arsenide

1982 ◽  
Vol 13 ◽  
Author(s):  
J.S. Williams
Keyword(s):  
Gallium Arsenide ◽  
Liquid Phase ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Solid Phase ◽  
Dopant Activation ◽  
Implantation Damage ◽  
Dopant Redistribution ◽  
Ion Implanted

ABSTRACTThis paper provides a brief overview of the application of transient annealing to the removal of ion implantation damage and dopant activation in GaAs. It is shown that both the liquid phase and solid phase annealing processes are more complex in GaAs than those observed in Si. Particular attention is given to observations of damage removal, surface dissociation, dopant redistribution, solubility and the electrical properties of GaAs. The various annealing mechanisms are discussed and areas in need of further investigation are identified.

scholarly journals Amorphization and Solid-Phase Epitaxial Growth of C-Cluster Ion-Implanted Si

2009 ◽  
Vol 38 (9) ◽  
pp. 1926-1930 ◽  
Author(s):  
N.G. Rudawski ◽  
L.R. Whidden ◽  
V. Craciun ◽  
K.S. Jones
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Cluster Ion ◽  
Ion Implanted

Amorphization and Solid Phase Epitaxial Growth in Ion Implanted III-V Compound Semiconductors

1993 ◽  
Vol 95-98 ◽  
pp. 989-994 ◽  
Author(s):  
M. Taniwaki ◽  
M. Yanaba ◽  
Toshimasa Yoshiie ◽  
Yasunori Hayashi
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Compound Semiconductors ◽  
Ion Implanted
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