scholarly journals Applying the extended molecule approach to correlated electron transport: Important insight from model calculations

2010 ◽  
Vol 133 (1) ◽  
pp. 014108 ◽  
Author(s):  
Ioan Bâldea ◽  
Horst Köppel ◽  
Robert Maul ◽  
Wolfgang Wenzel
2016 ◽  
Vol 478 ◽  
pp. 45-47
Author(s):  
Aleš Omerzu ◽  
Miloš Borovšak

2003 ◽  
Vol 67 (19) ◽  
Author(s):  
F. Claro ◽  
J. F. Weisz ◽  
S. Curilef

1999 ◽  
Vol 60 (24) ◽  
pp. 16906-16912 ◽  
Author(s):  
Géza Tóth ◽  
Alexei O. Orlov ◽  
Islamshah Amlani ◽  
Craig S. Lent ◽  
Gary H. Bernstein ◽  
...  

2015 ◽  
Vol 22 (4) ◽  
pp. 1042-1048
Author(s):  
Christian Vorwerk ◽  
Kevin Jorissen ◽  
John Rehr ◽  
Towfiq Ahmed

Calculations are presented of the electronic structure and X-ray spectra of materials with correlatedd- andf-electron states based on the Hubbard model, a real-space multiple-scattering formalism and a rotationally invariant local density approximation. Values of the Hubbard parameter are calculatedab initiousing the constrained random-phase approximation. The combination of the real-space Green's function with Hubbard model corrections provides an efficient approach to describe localized correlated electron states in these systems, and their effect on core-level X-ray spectra. Results are presented for the projected density of states and X-ray absorption spectra for transition metal- and lanthanide-oxides. Results are found to be in good agreement with experiment.


1998 ◽  
Vol 73 (19) ◽  
pp. 2787-2789 ◽  
Author(s):  
Alexei O. Orlov ◽  
Islamshah Amlani ◽  
Geza Toth ◽  
Craig S. Lent ◽  
Gary H. Bernstein ◽  
...  

Author(s):  
Chris Rourk ◽  
Yunbo Huang ◽  
Minjing Chen ◽  
Cai Shen

Highly-correlated electrons – electrons that engage in strong electron-electron interactions – have been observed in transition metal oxides and quantum dots and can create unusual material behavior that is difficult to model, such as switching between a low resistance metal state and a high resistance Mott insulator state. Tests of devices using a layer-by-layer deposition process for forming multilayer arrays of ferritin (a transition metal (iron) oxide storage protein) have been previously reported that indicate that highly-correlated electron transport is occurring, consistent with models of electron transport in quantum dots. This paper reports the results of the effect of various degrees of structural homogeneity on the electrical characteristics of these ferritin arrays, as well as demonstrating that these structures can provide a switching function associated with the circuit that they are contained within, consistent with the observed behavior of highly-correlated electrons.


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