scholarly journals Metal buffer layers and Y‐Ba‐Cu‐O thin films on Pt and stainless steel using pulsed laser deposition

1990 ◽  
Vol 68 (3) ◽  
pp. 1354-1356 ◽  
Author(s):  
R. E. Russo ◽  
R. P. Reade ◽  
J. M. McMillan ◽  
B. L. Olsen
1991 ◽  
Vol 243 ◽  
Author(s):  
K. Nashimoto ◽  
D. K. Fork ◽  
F. A. Ponce ◽  
T. H. Geballe

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.


2020 ◽  
Vol 128 (10) ◽  
pp. 104103
Author(s):  
Juliette Cardoletti ◽  
Philipp Komissinskiy ◽  
Enrico Bruder ◽  
Carl Morandi ◽  
Lambert Alff

2006 ◽  
Vol 252 (13) ◽  
pp. 4545-4548
Author(s):  
Hyun Woo Chung ◽  
Eun Sun Lee ◽  
Dong Hua Li ◽  
Byung Du Ahn ◽  
Sang Yeol Lee

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