Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3

This paper reviews the current status of graphene transistors as potential supplement to silicon CMOS technology. A short overview of graphene manufacturing and metrology methods is followed by an introduction of macroscopic graphene field effect transistors (FETs). The absence of an energy band gap is shown to result in severe shortcomings for logic applications. Possibilities to engineer a band gap in graphene FETs including quantum confinement in graphene Nanoribbons (GNRs) and electrically or substrate induced asymmetry in double and multi layer graphene are discussed. Novel switching mechanisms in graphene transistors are briefly introduced that could lead to future memory devices. Finally, graphene FETs are shown to be of interest for analog radio frequency applications.

Download Full-text

Capacitance Variation of Electrolyte-Gated Bilayer Graphene Based Transistors

Journal of Nanomaterials ◽

10.1155/2013/836315 ◽

2013 ◽

Vol 2013 ◽

pp. 1-5 ◽

Cited By ~ 1

Author(s):

Hediyeh Karimi ◽

Rubiyah Yusof ◽

Mohammad Taghi Ahmadi ◽

Mehdi Saeidmanesh ◽

Meisam Rahmani ◽

...

Keyword(s):

Analytical Model ◽

Field Effect ◽

Energy Gap ◽

Field Effect Transistors ◽

Bilayer Graphene ◽

Quantum Capacitance ◽

Chemical Doping ◽

Layer Graphene ◽

Capacitance Variation ◽

Acceptable Agreement

Quantum capacitance of electrolyte-gated bilayer graphene field-effect transistors is investigated in this paper. Bilayer graphene has received huge attention due to the fact that an energy gap could be opened by chemical doping or by applying external perpendicular electric field. So, this extraordinary property can be exploited to use bilayer graphene as a channel in electrolyte-gated field-effect transistors. The quantum capacitance of bi-layer graphene with an equivalent circuit is presented, and also based on the analytical model a numerical solution is reported. We begin by modeling the DOS, followed by carrier concentration as a functionVin degenerate and nondegenerate regimes. To further confirm this viewpoint, the presented analytical model is compared with experimental data, and acceptable agreement is reported.

Download Full-text

Multi-layer graphene field-effect transistors for improved device performance

2009 Device Research Conference ◽

10.1109/drc.2009.5354950 ◽

2009 ◽

Cited By ~ 1

Author(s):

Yang Sui ◽

Joerg Appenzeller

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Device Performance ◽

Layer Graphene

Download Full-text

Velocity Saturation Effect on Low Frequency Noise in Short Channel Single Layer Graphene Field Effect Transistors

ACS Applied Electronic Materials ◽

10.1021/acsaelm.9b00604 ◽

2019 ◽

Vol 1 (12) ◽

pp. 2626-2636 ◽

Cited By ~ 5

Author(s):

Nikolaos Mavredakis ◽

Wei Wei ◽

Emiliano Pallecchi ◽

Dominique Vignaud ◽

Henri Happy ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Single Layer ◽

Single Layer Graphene ◽

Frequency Noise ◽

Low Frequency Noise ◽

Short Channel ◽

Velocity Saturation ◽

Layer Graphene

Download Full-text

Understanding the bias dependence of low frequency noise in single layer graphene FETs

Nanoscale ◽

10.1039/c8nr04939d ◽

2018 ◽

Vol 10 (31) ◽

pp. 14947-14956 ◽

Cited By ~ 10

Author(s):

Nikolaos Mavredakis ◽

Ramon Garcia Cortadella ◽

Andrea Bonaccini Calia ◽

Jose A. Garrido ◽

David Jiménez

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Single Layer ◽

Single Layer Graphene ◽

Frequency Noise ◽

Low Frequency Noise ◽

Layer Graphene

This letter investigates the bias-dependent low frequency noise of single layer graphene field-effect transistors.

Download Full-text

Single-layer graphene field-effect transistors with ferroelectric PZT gate

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict.2014.7021336 ◽

2014 ◽

Cited By ~ 1

Author(s):

Xiaowen Zhang ◽

Dan Xie ◽

Jianlong Xu ◽

Haiming Zhao ◽

Cheng Zhang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Single Layer ◽

Single Layer Graphene ◽

Layer Graphene

Download Full-text

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides

Physical Review Letters ◽

10.1103/physrevlett.102.136808 ◽

2009 ◽

Vol 102 (13) ◽

Cited By ~ 161

Author(s):

X. Hong ◽

A. Posadas ◽

K. Zou ◽

C. H. Ahn ◽

J. Zhu

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Gate Oxides ◽

Layer Graphene ◽

Few Layer Graphene

Download Full-text

$V_{\rm th}$ Shift in Single-Layer Graphene Field-Effect Transistors and Its Correlation With Raman Inspection

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2012.2190414 ◽

2012 ◽

Vol 12 (2) ◽

pp. 478-481 ◽

Cited By ~ 11

Author(s):

W. J. Liu ◽

X. W. Sun ◽

X. A. Tran ◽

Z. Fang ◽

Z. R. Wang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Single Layer ◽

Single Layer Graphene ◽

Layer Graphene

Download Full-text

Synthesis of Few-Layer and Multi-Layer Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transferring Processes

MRS Proceedings ◽

10.1557/proc-1205-l03-24 ◽

2009 ◽

Vol 1205 ◽

Cited By ~ 1

Author(s):

Daiyu Kondo ◽

Katsunori Yagi ◽

Naoki Harada ◽

Motonobu Sato ◽

Mizuhisa Nihei ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Drain Current ◽

Si Substrate ◽

Layer Graphene ◽

Catalyst Film ◽

Fe Catalyst

AbstractWe have fabricated top-gated field effect transistors (FETs) using graphene synthesized by chemical vapor deposition directly on a SiO2/Si substrate without using any transferring processes. Graphene was synthesized on an Fe catalyst film on the substrate at 650°C. The catalyst film was then etched after both ends of the graphene were fixed by source and drain electrodes, leaving the graphene channel connecting the two electrodes. Top-gated FETs were then made by covering graphene channels with HfO2 and depositing top electrodes. The drain current was successfully modulated by the gate voltage and exhibited the bipolar behavior that is characteristic of graphene. Also, it has been shown that graphene channels can sustain an electric current with a density of 107–108 /cm2. Our newly developed fabrication process paves a way to fabricate graphene transistors all over large substrates including Si and glass.

Download Full-text