Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory

1991 ◽  
Vol 69 (5) ◽  
pp. 2849-2856 ◽  
Author(s):  
Noboru Yamada ◽  
Eiji Ohno ◽  
Kenichi Nishiuchi ◽  
Nobuo Akahira ◽  
Masatoshi Takao
APL Materials ◽  
2021 ◽  
Vol 9 (5) ◽  
pp. 051120
Author(s):  
Clemens Mart ◽  
Thomas Kämpfe ◽  
Kati Kühnel ◽  
Malte Czernohorsky ◽  
Sabine Kolodinski ◽  
...  

2021 ◽  
pp. 159346
Author(s):  
Hyun-Woo Bang ◽  
Woosuk Yoo ◽  
Kyujoon Lee ◽  
Young Haeng Lee ◽  
Myung-Hwa Jung

Author(s):  
Karl Yngve Lervåg ◽  
Hans Langva Skarsvåg ◽  
Eskil Aursand ◽  
Jabir Ali Ouassou ◽  
Morten Hammer ◽  
...  

2020 ◽  
Vol 984 ◽  
pp. 91-96
Author(s):  
Cheng Liu ◽  
Yu Hao Song ◽  
Dong Yang Li ◽  
Wei Li

The structural and optical properties of amorphous silicon (a-Si) and Al-dispersed amorphous silicon (a-Si:Al) thin films irradiated by femtosecond (fs) laser at various energy densities are investigated comparatively in this article. It is found that there is an uneven crystallization in both amorphous thin films by means of optical microscopy and laser Raman spectroscopy respectively. The crystallization in each pulse spot area is gradually weakened from the center to the edge along with the energy dispersion of laser irradiation. The laser induced crystallization in a-Si thin films begins early and develops more extensively compared to that in a-Si:Al thin films, and Al nanoparticles inhibit somehow the crystallization of a-Si in a-Si:Al thin films.


2007 ◽  
Vol 368 (1-2) ◽  
pp. 117-124 ◽  
Author(s):  
Yue Zheng ◽  
Biao Wang ◽  
C.H. Woo

2006 ◽  
Vol 20 (14) ◽  
pp. 821-833 ◽  
Author(s):  
ARIF NESRULLAJEV ◽  
ŞENER OKTIK

In this work, the effect of thin films on the thermotropic and thermo-optical properties and peculiarities of the phase transitions between the smectic A and isotropic liquid have been investigated. Peculiarities of the heterophase regions of the straight smectic A-isotropic liquid and reverse isotropic liquid-smectic A phase transitions have been studied. Change of morphologic properties of the heterophase regions, shift of the phase transition temperatures and the change of temperature widths of these heterophase regions under thin film influence have been observed.


2003 ◽  
Vol 15 (21) ◽  
pp. 1826-1828 ◽  
Author(s):  
V. Lyahovitskaya ◽  
I. Zon ◽  
Y. Feldman ◽  
S.R. Cohen ◽  
A.K. Tagantsev ◽  
...  

1996 ◽  
Vol 17 (4-6) ◽  
pp. 199-215 ◽  
Author(s):  
Philippe Bordarier ◽  
Bernard Rousseau ◽  
Alain H. Fuchs
Keyword(s):  

Author(s):  
T. M. Correia ◽  
Q. Zhang

Full-perovskite Pb 0.87 Ba 0.1 La 0.02 (Zr 0.6 Sn 0.33 Ti 0.07 )O 3 (PBLZST) thin films were fabricated by a sol–gel method. These revealed both rhombohedral and tetragonal phases, as opposed to the full-tetragonal phase previously reported in ceramics. The fractions of tetragonal and rhombohedral phases are found to be strongly dependent on film thickness. The fraction of tetragonal grains increases with increasing film thickness, as the substrate constraint throughout the film decreases with film thickness. The maximum of the dielectric constant ( ε m ) and the corresponding temperature ( T m ) are thickness-dependent and dictated by the fraction of rhombohedral and tetragonal phase, with ε m reaching a minimum at 400 nm and T m shifting to higher temperature with increasing thickness. With the thickness increase, the breakdown field decreases, but field-induced antiferroelectric–ferroelectric ( E AFE−FE ) and ferroelectric–antiferroelectric ( E FE−AFE ) switch fields increase. The electrocaloric effect increases with increasing film thickness. This article is part of the themed issue ‘Taking the temperature of phase transitions in cool materials’.


2013 ◽  
Vol 102 (7) ◽  
pp. 072407 ◽  
Author(s):  
A. Sokolov ◽  
Le Zhang ◽  
I. Dubenko ◽  
T. Samanta ◽  
S. Stadler ◽  
...  

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