On the period of reflection high‐energy electron diffraction intensity oscillations during Si molecular‐beam epitaxy on vicinal Si(001)

1991 ◽  
Vol 70 (5) ◽  
pp. 2614-2617 ◽  
Author(s):  
H. J. W. Zandvliet ◽  
H. B. Elswijk ◽  
D. Dijkkamp ◽  
E. J. van Loenen ◽  
J. Dieleman
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Diffraction Intensity

Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy

1996 ◽  
Vol 35 (Part 2, No. 3B) ◽  
pp. L366-L369 ◽  
Author(s):  
Hyun-Chul Ko ◽  
Shigeo Yamaguchi ◽  
Hitoshi Kurusu ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Diffraction Intensity
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