Structural and optical properties of Al0.48In0.52As layers grown on InP by molecular beam epitaxy: Influence of the substrate temperature and of a buffer layer

1991 ◽  
Vol 70 (12) ◽  
pp. 7362-7369 ◽  
Author(s):  
E. Tournié ◽  
Y.‐H. Zhang ◽  
N. J. Pulsford ◽  
K. Ploog
Author(s):  
Б.Р. Семягин ◽  
А.В. Колесников ◽  
М.А. Путято ◽  
В.В. Преображенский ◽  
Т.Б. Попова ◽  
...  

By molecular-beam epitaxy we have grown epitaxial layers of GaAs1-xBix solid solutions with a bismuth content of 0 < x < 0.02. Structural and optical properties of the layers were investigated. We determine the influence of the bismuth flux and substrate temperature on the bismuth incorporation into the growing layers.


2017 ◽  
Vol 51 (2) ◽  
pp. 267-271 ◽  
Author(s):  
N. V. Kryzhanovskaya ◽  
Yu. S. Polubavkina ◽  
V. N. Nevedomskiy ◽  
E. V. Nikitina ◽  
A. A. Lazarenko ◽  
...  

2018 ◽  
Vol 26 (18) ◽  
pp. 23031 ◽  
Author(s):  
David Arto Laleyan ◽  
Kelsey Mengle ◽  
Songrui Zhao ◽  
Yongjie Wang ◽  
Emmanouil Kioupakis ◽  
...  

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