Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimensional electron gas density and electron mobility

2010 ◽  
Vol 108 (10) ◽  
pp. 104502 ◽  
Author(s):  
Min Chu ◽  
Andrew D. Koehler ◽  
Amit Gupta ◽  
Toshikazu Nishida ◽  
Scott E. Thompson
Keyword(s):  
Electron Mobility ◽  
Electron Gas ◽  
High Electron Mobility Transistor ◽  
Gauge Factor ◽  
High Electron ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
High Electron Mobility ◽  
Dimensional Electron Gas
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