Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures

2021 ◽  
Vol 118 (12) ◽  
pp. 122105
Author(s):  
R. Lingaparthi ◽  
N. Dharmarasu ◽  
K. Radhakrishnan ◽  
A. Ranjan ◽  
Tian Long Alex Seah ◽  
...  
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