ABSTRACTArgon plasma exposure has been used to induce surface chemical modification of aluminium thin films, causing a drastic change in etch rate in standard HNO3/CH3COOH/H3PO4 etchant. The inhibition period was found to increase with power and Ar plasma exposure time. Auger electron and x-ray photoelectron spectroscopies have indicated formation of an aluminium fluoride (AlF3) surface layer due to fluorine contamination originating from the residue left in the plasma chamber during CF4 processing. The high etch selectivity between unexposed and argon plasma exposed regions has been exploited as a new technique for resistless patterning of aluminium.
Surface Modifications of Metals Induced by Soft X-Ray Laser Pulse Irradiations