Secondary ion mass spectrometry generates swelling of GaSb: Depth resolution and secondary ion yields

1993 ◽  
Vol 73 (5) ◽  
pp. 2051-2056 ◽  
Author(s):  
M. Gauneau ◽  
R. Chaplain ◽  
A. Rupert ◽  
Y. Toudic ◽  
R. Callec ◽  
...  
2013 ◽  
Vol 85 (12) ◽  
pp. 5654-5658 ◽  
Author(s):  
Sadia Sheraz née Rabbani ◽  
Andrew Barber ◽  
John S. Fletcher ◽  
Nicholas P. Lockyer ◽  
John C. Vickerman

2019 ◽  
Vol 25 (2) ◽  
pp. 517-523
Author(s):  
Alain Portavoce ◽  
Khalid Hoummada ◽  
Lee Chow

AbstractFor a long time, secondary ion mass spectrometry (SIMS) was the only technique allowing impurity concentrations below 1 at% to be precisely measured in a sample with a depth resolution of few nanometers. For example, SIMS is the classical technique used in microelectronics to study dopant distribution in semiconductors and became, after radiotracers were forsaken, the principal tool used for atomic transport characterization (diffusion coefficient measurements). Due to the lack of other equivalent techniques, sometimes SIMS could be used erroneously, especially when the analyzed solute atoms formed clusters, or for interfacial concentration measurements (segregation coefficient measurements) for example. Today, concentration profiles measured by atom probe tomography (APT) can be compared to SIMS profiles and allow the accuracy of SIMS measurements to be better evaluated. However, APT measurements can also carry artifacts and limitations that can be investigated by SIMS. After a summary of SIMS and APT measurement advantages and disadvantages, the complementarity of these two techniques is discussed, particularly in the case of experiments aiming to measure diffusion and segregation coefficients.


2015 ◽  
Vol 87 (4) ◽  
pp. 2367-2374 ◽  
Author(s):  
Sadia Sheraz née Rabbani ◽  
Irma Berrueta Razo ◽  
Taylor Kohn ◽  
Nicholas P. Lockyer ◽  
John C. Vickerman

1995 ◽  
Vol 395 ◽  
Author(s):  
J W. Erickson ◽  
Y. Gao ◽  
R. G. Wilson

ABSTRACTSamples of representative AlxGayIn1−x-yN compositions have been studied with secondary ion mass spectrometry (SIMS). First, ionized species of common interest (H, B, C, O, Mg, Si, and Cd) were implanted into the Ill-nitride samples to provide calibrated standards. Depth profiles and conversion factors for quantification of dopants were then obtained using O2+ or Cs+bombardment and positive or negative SIMS to measure B+ and Mg+; H−, B−, C−, O−, and Si−; and CdCs+. In addition calibration curves for quantification of stoichiometry were prepared using MCs+ ions (NCs+, AlCs−, GaCs+, InCs+) for which the ion yields are relatively independent of the matrix composition; and using atomic, dimer, and trimer ions (Al, Ga, In, Al2, Ga2, In2, Al3, Ga3) which are very sensitive to matrix composition. The empirical calibration curves show small non-linearities. Dopant concentrations can be quantified with great sensitivity (detection limits usually below 1 ppm), accuracy (usually better than 10%), and precision (better than 25%). Matrix stoichiometry can be quantified with an accuracy of about 1–3%.


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