Analysis of the forward and reverse bias I-V characteristics on Au/PVA:Zn/n-Si Schottky barrier diodes in the wide temperature range

2011 ◽  
Vol 109 (5) ◽  
pp. 054502 ◽  
Author(s):  
İlke Taşçıoğlu ◽  
Umut Aydemir ◽  
Şemsettin Altındal ◽  
Barış Kınacı ◽  
Süleyman Özçelik
Keyword(s):  
Schottky Barrier ◽  
Wide Temperature Range ◽  
Reverse Bias ◽  
Schottky Barrier Diodes ◽  
Temperature Range

scholarly journals Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range

2016 ◽  
Vol 858 ◽  
pp. 741-744 ◽  
Author(s):  
Besar Asllani ◽  
Maxime Berthou ◽  
Dominique Tournier ◽  
Pierre Brosselard ◽  
Phillippe Godignon
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Wide Temperature Range ◽  
Reverse Bias ◽  
Schottky Contact ◽  
Bias Current ◽  
Strong Impact ◽  
Temperature Range ◽  
Wide Range

This paper presents a study of the Schottky barrier evolution on SBD and JBS diodes over a wide range of temperatures from 80 to 500 K. We show that inhomogeneities of the Schottky contact have a strong impact on the dependence of barrier characteristics with temperature, especially below 200 K. Analysis of the reverse bias current of such diodes at low temperature show that the barrier height depends on temperature but also on voltage.

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