scholarly journals Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range

2016 ◽  
Vol 858 ◽  
pp. 741-744 ◽  
Author(s):  
Besar Asllani ◽  
Maxime Berthou ◽  
Dominique Tournier ◽  
Pierre Brosselard ◽  
Phillippe Godignon
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Wide Temperature Range ◽  
Reverse Bias ◽  
Schottky Contact ◽  
Bias Current ◽  
Strong Impact ◽  
Temperature Range ◽  
Wide Range

This paper presents a study of the Schottky barrier evolution on SBD and JBS diodes over a wide range of temperatures from 80 to 500 K. We show that inhomogeneities of the Schottky contact have a strong impact on the dependence of barrier characteristics with temperature, especially below 200 K. Analysis of the reverse bias current of such diodes at low temperature show that the barrier height depends on temperature but also on voltage.

Electrical properties of thin-film resistors in a wide temperature range

Circuit World ◽  
2015 ◽  
Vol 41 (3) ◽  
pp. 116-120 ◽  
Author(s):  
Paweł Winiarski ◽  
Adam Kłossowicz ◽  
Jacek Wróblewski ◽  
Andrzej Dziedzic ◽  
Wojciech Stęplewski
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Low Temperature ◽  
Wide Temperature Range ◽  
Linear Temperature Dependence ◽  
Content Type ◽  
Temperature Range ◽  
Wide Range ◽  
Thin Film Resistors ◽  
Thermal Shocks

Purpose – The purpose of this paper is to characterize electrical properties of nickel-phosphorus (Ni-P) thin-film resistors made on FR-4 laminate in a wide range of temperature (from −180 to 20°C). Design/methodology/approach – The study was performed using resistors made of Ni-P foil with two different thicknesses (0.1 or 0.05 μm) and sheet resistances (100 or 250 Ω/sq), respectively. The resistance rectangular resistors had length and width from the range between 0.59 and 5.91 mm. The resistance versus temperature characteristics and their distribution as well as resistors ' durability to low-temperature thermal shocks were investigated. Findings – The results showed almost linear temperature dependence of resistance with a negative temperature coefficient of resistance of about −95 ppm/°C for 250 Ω/sq layer and −55 ppm/°C for 100 Ω/sq layer. A very small dimensional effect was observed for sheet resistance as well as for R(T) characteristic. Thin-film resistors are also characterized by very high durability to low-temperature thermal shocks. Originality/value – The results presented in this paper can be very useful for low-temperature applications of thin-film resistors made on printed circuit boards. They suggest possibility of wide applications of these components in a wide temperature range.

Analysis of the forward and reverse bias I-V characteristics on Au/PVA:Zn/n-Si Schottky barrier diodes in the wide temperature range

2011 ◽  
Vol 109 (5) ◽  
pp. 054502 ◽  
Author(s):  
İlke Taşçıoğlu ◽  
Umut Aydemir ◽  
Şemsettin Altındal ◽  
Barış Kınacı ◽  
Süleyman Özçelik
Keyword(s):  
Schottky Barrier ◽  
Wide Temperature Range ◽  
Reverse Bias ◽  
Schottky Barrier Diodes ◽  
Temperature Range

Enabling highly reversible sodium metal cycling across a wide temperature range with dual-salt electrolytes

2021 ◽  
Author(s):  
Akila C. Thenuwara ◽  
Pralav P. Shetty ◽  
Neha Kondekar ◽  
Chuanlong Wang ◽  
Weiyang Li ◽  
...  
Keyword(s):  
Wide Temperature Range ◽  
High Energy ◽  
Liquid Electrolyte ◽  
Metal Cycling ◽  
Temperature Range ◽  
Sodium Metal ◽  
Wide Range

A new dual-salt liquid electrolyte is developed that enables the reversible operation of high-energy sodium-metal-based batteries over a wide range of temperatures down to −50 °C.

Barrier Height Modification of n-InP Using a Silver Nanoparticles Loaded Graphene Oxide as an Interlayer in a Wide Temperature Range

2019 ◽  
Vol 48 (5) ◽  
pp. 3169-3182 ◽  
Author(s):  
A. Baltakesmez ◽  
A. Taşer ◽  
Z. Kudaş ◽  
B. Güzeldir ◽  
D. Ekinci ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Graphene Oxide ◽  
Barrier Height ◽  
Wide Temperature Range ◽  
Temperature Range

Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts

2014 ◽  
Vol 778-780 ◽  
pp. 1142-1145 ◽  
Author(s):  
Filippo Giannazzo ◽  
Stefan Hertel ◽  
Andreas Albert ◽  
Antonino La Magna ◽  
Fabrizio Roccaforte ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Photoelectron Spectroscopy ◽  
Schottky Contact ◽  
Epitaxial Graphene ◽  
Schottky Contacts ◽  
Specific Contact Resistance ◽  
Monolayer Graphene ◽  
Conductive Atomic Force Microscopy

Epitaxial graphene fabricated by thermal decomposition of the Si-face of silicon carbide (SiC) forms a defined interface to the SiC substrate. As-grown monolayer graphene with buffer layer establishes an ohmic interface even to low-doped (e. g. [N] ≈ 1015 cm-3) SiC, and a specific contact resistance as low as ρC = 5.9×10-6 Ωcm2 can be achieved on highly n-doped SiC layers. After hydrogen intercalation of monolayer graphene, the so-called quasi-freestanding graphene forms a Schottky contact to n-type SiC with a Schottky barrier height of 1.5 eV as determined from C-V analysis and core level photoelectron spectroscopy (XPS). This value, however, strongly deviates from the respective value of less than 1 eV determined from I-V measurements. It was found from conductive atomic force microscopy (C-AFM) that the Schottky barrier is locally lowered on other crystal facets located at substrate step edges. For very small Schottky contacts, the barrier height extracted from I-V curves approaches the value of 1.5 eV from C-V and XPS.

Reverse‐bias current reduction in low‐temperature‐annealed siliconpnjunctions by ultraclean ion‐implantation technology

1990 ◽  
Vol 67 (12) ◽  
pp. 7404-7412 ◽  
Author(s):  
T. Nitta ◽  
T. Ohmi ◽  
Y. Ishihara ◽  
A. Okita ◽  
T. Shibata ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Reverse Bias ◽  
Bias Current ◽  
Current Reduction

Reverse-Bias Current Reduction in Low-Temperature-Annealed pn Junctions Using a UHV Ion-Implanter

1989 ◽  
Author(s):  
Y. Ishihara ◽  
A. Okita ◽  
K. Yoshikawa ◽  
T. Shibata ◽  
T. Ohmi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Reverse Bias ◽  
Bias Current ◽  
Pn Junctions ◽  
Current Reduction
Sign in / Sign up

Export Citation Format

Share Document