Quantitative characterization of modulation‐doped strained quantum wells through line‐shape analysis of room‐temperature photoluminescence spectra

1993 ◽  
Vol 74 (4) ◽  
pp. 2760-2767 ◽  
Author(s):  
Steven K. Brierley
Keyword(s):  
Quantum Wells ◽  
Shape Analysis ◽  
Line Shape ◽  
Room Temperature ◽  
Photoluminescence Spectra ◽  
Quantitative Characterization ◽  
Room Temperature Photoluminescence ◽  
Strained Quantum Wells ◽  
Line Shape Analysis

Line-shape analysis of the reflectivity spectra of GaAs/(Ga,Al)As single quantum wells grown on (001)- and (311)-oriented substrates

1990 ◽  
Vol 41 (5) ◽  
pp. 2885-2889 ◽  
Author(s):  
B. Gil ◽  
Y. El Khalifi ◽  
H. Mathieu ◽  
C. de Paris ◽  
J. Massies ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Shape Analysis ◽  
Line Shape ◽  
Single Quantum ◽  
Line Shape Analysis ◽  
Reflectivity Spectra

Room‐temperature photoluminescence in strained quantum wells of InGaAs/GaAs grown by molecular‐beam epitaxy

1992 ◽  
Vol 71 (1) ◽  
pp. 539-541 ◽  
Author(s):  
Faustino Martelli ◽  
Maria Grazia Proietti ◽  
Maria Gabriella Simeone ◽  
Maria Rita Bruni ◽  
Marco Zugarini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Photoluminescence ◽  
Strained Quantum Wells

Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 501-504 ◽  
Author(s):  
T. Kitamura ◽  
Shinichi Nakashima ◽  
Tomohisa Kato ◽  
K. Kojima ◽  
Hajime Okumura
Keyword(s):  
Electrical Properties ◽  
Raman Scattering ◽  
Shape Analysis ◽  
Line Shape ◽  
Carrier Density ◽  
Peak Frequency ◽  
Bulk Crystals ◽  
Raman Scattering Spectroscopy ◽  
Line Shape Analysis

We characterized the 4H- and 6H-SiC bulk crystals with graded doping and epitaxial films with various carrier densities by Raman scattering spectroscopy. Electrical properties such as free carrier density were examined for the SiC crystals through Raman measurements of the A1 LO-phonon plasmon coupled (LOPC) mode and its line shape analysis. The peak frequency and band width of LOPC mode varied with carrier density in the range from 1016 to 1019 cm-3. The line shape analysis revealed that the carrier density in the SiC crystals can be simply estimated from measured frequency shift of LOPC mode for 4H- and 6H-SiC crystals.

Structural and Optical Characterization of ZnO Nanofilms Deposited by CBD-AμW

2015 ◽  
Vol 1766 ◽  
pp. 151-158 ◽  
Author(s):  
J. Díaz-Reyes ◽  
R. S. Castillo-Ojeda ◽  
J. E. Flores-Mena ◽  
J. Martínez-Juárez
Keyword(s):  
Room Temperature ◽  
Optical Characterization ◽  
Xrd Analysis ◽  
Photoluminescence Spectra ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Glass Substrates ◽  
Corning Glass

ABSTRACTZnO was grown by Chemical Bath Deposition technique activated by microwaves (CBD-AμW) on corning glass substrates. The ZnO structural and optical properties are studied as a function of the urea concentration in the growth solution. ZnO chemical stoichiometry was determined by Energy-dispersive X-ray spectroscopy (EDS). The XRD analysis and Raman scattering reveal that ZnO deposited thin films showed hexagonal polycrystalline phase wurtzite type. The Raman spectra present four main peaks associated to the modes E2high, (E2high-E2low), E2low and an unidentified vibrational band observed at 444, 338, 104 and 78 cm-1. The E2low mode involves mainly Zn atoms motion in the unit cell and the E2high mode is associated to oxygen motion. The observed emission peaks in the room temperature photoluminescence spectra are associated at vacancies of zinc and oxygen in the lattice.

Photoluminescence line-shape analysis in quantum wells embedded in superlattices

2001 ◽  
Vol 15 (1-2) ◽  
pp. 75-77 ◽  
Author(s):  
V. Donchev ◽  
N. Shtinkov ◽  
K. Germanova ◽  
I. Ivanov ◽  
H. Brachkov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Shape Analysis ◽  
Line Shape ◽  
Line Shape Analysis ◽  
Photoluminescence Line
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