Improved light-emitting diode performance by conformal overgrowth of multiple quantum wells and fully coalesced p-type GaN on GaN nanowires

2011 ◽  
Vol 98 (14) ◽  
pp. 143104 ◽  
Author(s):  
P. Frajtag ◽  
A. M. Hosalli ◽  
G. K. Bradshaw ◽  
N. Nepal ◽  
N. A. El-Masry ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Gan Nanowires ◽  
P Type

UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells

2002 ◽  
Vol 722 ◽  
Author(s):  
Mee-Yi Ryu ◽  
C. Q. Chen ◽  
E. Kuokstis ◽  
J. W. Yang ◽  
G. Simin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Excitation Power Density ◽  
Light Emitting ◽  
Uv Emission ◽  
Alloy Disorder

AbstractWe present the results on investigation and analysis of photoluminescence (PL) dynamics of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a novel pulsed metalorganic chemical vapor deposition (PMOCVD). The emission peaks in both AlInGaN epilayers and MQWs show a blueshift with increasing excitation power density. The PL emission of quaternary samples is attributed to recombination of carriers/excitons localized at band-tail states. The PL decay time increases with decreasing emission photon energy, which is a characteristic of localized carrier/exciton recombination due to alloy disorder. The obtained properties of AlInGaN materials grown by a PMOCVD are similar to those of InGaN. This indicates that the AlInGaN system is promising for ultraviolet applications such as the InGaN system for blue light emitting diode and laser diode applications.

First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode onm-Plane Sapphire with AlGaN Multiple Quantum Wells

2010 ◽  
Vol 49 (4) ◽  
pp. 040206 ◽  
Author(s):  
Krishnan Balakrishnan ◽  
Vinod Adivarahan ◽  
Qhalid Fareed ◽  
Mohamed Lachab ◽  
Bin Zhang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Deep Ultraviolet

P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2489-2492 ◽  
Author(s):  
Chih-Hsin Ko ◽  
Yan-Kuin Su ◽  
Shoou-Jinn Chang ◽  
Ta-Ming Kuan ◽  
Chung-I Chiang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Diode Structure ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Organic Vapor ◽  
Metal Organic

Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells

2008 ◽  
Vol 92 (9) ◽  
pp. 091110 ◽  
Author(s):  
Il-Kyu Park ◽  
Ja-Yeon Kim ◽  
Min-Ki Kwon ◽  
Chu-Young Cho ◽  
Jae-Hong Lim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
White Light ◽  
Light Emitting Diode ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting

A single InGaN/GaN multiple quantum wells microwire light-emitting diode with high efficiency current injection and spreading

2019 ◽  
Vol 791 ◽  
pp. 1241-1247 ◽  
Author(s):  
Weidong Song ◽  
Hang Chen ◽  
Xingjun Luo ◽  
Yiming Sun ◽  
Xingfu Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Efficiency ◽  
Light Emitting Diode ◽  
Current Injection ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting
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