The effect of post deposition low energy plasma bombardment on the ultra thin hydrogenated silicon oxide films

1995 ◽  
Vol 78 (11) ◽  
pp. 6852-6854 ◽  
Author(s):  
Tien‐I Bao ◽  
Lin I
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Low Energy ◽  
Hydrogenated Silicon ◽  
Post Deposition

Thickness-Dependent Interface Parameters of Silicon Oxide Films Grown on Plasma Hydrogenated Silicon

2010 ◽  
Vol 159 ◽  
pp. 163-166 ◽  
Author(s):  
S. Alexandrova ◽  
A. Szekeres
Keyword(s):  
Refractive Index ◽  
Plasma Treatment ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Oxide Thickness ◽  
Hydrogenated Silicon ◽  
Oxide Structure ◽  
Interface Parameters

In the present paper we discuss the defects at the oxide/Si interface and the structure of silicon oxide films grown on plasma hydrogenated (100) and (111)Si. The effect of oxide thickness ranging from 7 to 40 nm on the interface parameters was examined. Electrically active defects were characterized through C-V and G-V measurements. The dependence of the refractive index on oxide thickness was studied. Information on the oxide structure was inferred through the refractive index evaluated from ellipsometric measurements. From both, the electrical and optical results a characteristic oxide thickness was found, below which the oxide structure is different from SiO2, most probably SiOх. It is related to a modified Si surface during the pre-oxidation plasma treatment and its value depends on Si orientation and pre-clean conditions. A characteristic oxide thickness of 13 nm was found for Si hydrogenated without heating and, of 9 nm for Si hydrogenated at 300oC.

Mechanisms of reduction of the internal stress in hydrogenated silicon oxide films prepared by Ar-H2 sputtering

1996 ◽  
Vol 281-282 ◽  
pp. 348-351
Author(s):  
Hiroki Takahashi ◽  
Akihiro Nishiguchi ◽  
Hirotoshi Nagata ◽  
Haruki Kataoka ◽  
Masahide Fujishima
Keyword(s):  
Internal Stress ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Hydrogenated Silicon

Structural relaxation and stress reduction in hydrogenated silicon oxide films

1996 ◽  
Vol 79 (5) ◽  
pp. 2787-2789 ◽  
Author(s):  
Hiroki Takahashi ◽  
Akihiro Nishiguchi ◽  
Hirotoshi Nagata ◽  
Haruki Kataoka ◽  
Masahide Fujishima
Keyword(s):  
Stress Reduction ◽  
Structural Relaxation ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Hydrogenated Silicon

Mechanism of enhanced photoluminescence of Tb ions in hydrogenated silicon-rich silicon oxide films

2016 ◽  
Vol 611 ◽  
pp. 62-67 ◽  
Author(s):  
M.M. Klak ◽  
G. Zatryb ◽  
J. Wojcik ◽  
J. Misiewicz ◽  
P. Mascher ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Hydrogenated Silicon ◽  
Enhanced Photoluminescence

Helium ion‐induced stoichiometry modification in hydrogenated silicon oxide films

1996 ◽  
Vol 69 (25) ◽  
pp. 3845-3847 ◽  
Author(s):  
C. Godet ◽  
R. Etemadi ◽  
C. Clerc
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Hydrogenated Silicon ◽  
Helium Ion
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