Reduced leakage current and improved breakdown voltage of silicon oxide films deposited in low energy RF discharges at room temperature

1992 ◽  
Vol 7 (8) ◽  
pp. 1123-1126 ◽  
Author(s):  
Ming-Shing Wu ◽  
Tien-I Bao ◽  
Lin I
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Low Energy ◽  
Rf Discharges

Investigation of silicon oxide films prepared by room-temperature ion plating

1998 ◽  
Vol 83 (2) ◽  
pp. 1107-1113 ◽  
Author(s):  
Ching-Fa Yeh ◽  
Tai-Ju Chen ◽  
Ching-Lin Fan ◽  
Jiann-Shiun Kao
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Ion Plating

Thermally Stable Carbon-Doped Silicon Oxide Films Deposited at Room Temperature

2006 ◽  
Author(s):  
Keisuke Yamaoka ◽  
Hideaki Kato ◽  
Daisuke Tsukiyama ◽  
Yuji Yoshizako ◽  
Yoshikazu Terai ◽  
...  
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Thermally Stable ◽  
Stable Carbon ◽  
Carbon Doped ◽  
Doped Silicon

Room-temperature deposition of high-purity silicon oxide films by RF plasma-enhanced CVD

2001 ◽  
Vol 146-147 ◽  
pp. 451-456 ◽  
Author(s):  
Katsuya Teshima ◽  
Yasushi Inoue ◽  
Hiroyuki Sugimura ◽  
Osamu Takai
Keyword(s):  
High Purity ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Rf Plasma ◽  
Plasma Enhanced Cvd ◽  
High Purity Silicon ◽  
Temperature Deposition
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