Infrared studies of room temperature deposition of hydrogenated silicon oxide films in rf magnetron discharges

1995 ◽  
Vol 78 (5) ◽  
pp. 3342-3347 ◽  
Author(s):  
Tien‐I Bao ◽  
Ming‐Shing Wu ◽  
Lin I
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Hydrogenated Silicon ◽  
Infrared Studies ◽  
Temperature Deposition

Room-temperature deposition of high-purity silicon oxide films by RF plasma-enhanced CVD

2001 ◽  
Vol 146-147 ◽  
pp. 451-456 ◽  
Author(s):  
Katsuya Teshima ◽  
Yasushi Inoue ◽  
Hiroyuki Sugimura ◽  
Osamu Takai
Keyword(s):  
High Purity ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Rf Plasma ◽  
Plasma Enhanced Cvd ◽  
High Purity Silicon ◽  
Temperature Deposition

Investigation of silicon oxide films prepared by room-temperature ion plating

1998 ◽  
Vol 83 (2) ◽  
pp. 1107-1113 ◽  
Author(s):  
Ching-Fa Yeh ◽  
Tai-Ju Chen ◽  
Ching-Lin Fan ◽  
Jiann-Shiun Kao
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Ion Plating

Thickness-Dependent Interface Parameters of Silicon Oxide Films Grown on Plasma Hydrogenated Silicon

2010 ◽  
Vol 159 ◽  
pp. 163-166 ◽  
Author(s):  
S. Alexandrova ◽  
A. Szekeres
Keyword(s):  
Refractive Index ◽  
Plasma Treatment ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Oxide Thickness ◽  
Hydrogenated Silicon ◽  
Oxide Structure ◽  
Interface Parameters

In the present paper we discuss the defects at the oxide/Si interface and the structure of silicon oxide films grown on plasma hydrogenated (100) and (111)Si. The effect of oxide thickness ranging from 7 to 40 nm on the interface parameters was examined. Electrically active defects were characterized through C-V and G-V measurements. The dependence of the refractive index on oxide thickness was studied. Information on the oxide structure was inferred through the refractive index evaluated from ellipsometric measurements. From both, the electrical and optical results a characteristic oxide thickness was found, below which the oxide structure is different from SiO2, most probably SiOх. It is related to a modified Si surface during the pre-oxidation plasma treatment and its value depends on Si orientation and pre-clean conditions. A characteristic oxide thickness of 13 nm was found for Si hydrogenated without heating and, of 9 nm for Si hydrogenated at 300oC.

The Deposition of Silicon Oxide Films by LPCVD at Temperatures as Low as 100°C from a New Liquid Source

1992 ◽  
Vol 282 ◽  
Author(s):  
K. Hochberg ◽  
David A. Roberts
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Temperature Sensitive ◽  
Oxide Layers ◽  
Low Temperature Deposition ◽  
Liquid Source ◽  
Temperature Deposition ◽  
Higher Temperature

ABSTRACTA precursor for the LPCVD of silicon oxide films has been developed that extends the low temperature deposition range to 100°C. The chemical, 1,4 disilabutane (DSB), produces silicon oxide depositions similar to those of the higher temperature silane and diethylsilane (DES) processes. Optimum DSB processes require pressures below 300 mTorr, similar to silane, in contrast to DES pressures above 600 mTorr at 350°C. This results in poorer conformalities than those of DES, but the step coverages are still superior to those from silane oxides. The DSB films are low stress, carbon-free oxide layers that are suitable for temperature-sensitive underlayers and substrates such as photoresist, plastics, GaAs, and HgCdTe.

Mechanisms of reduction of the internal stress in hydrogenated silicon oxide films prepared by Ar-H2 sputtering

1996 ◽  
Vol 281-282 ◽  
pp. 348-351
Author(s):  
Hiroki Takahashi ◽  
Akihiro Nishiguchi ◽  
Hirotoshi Nagata ◽  
Haruki Kataoka ◽  
Masahide Fujishima
Keyword(s):  
Internal Stress ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Hydrogenated Silicon

High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition

2011 ◽  
Vol 98 (25) ◽  
pp. 252903 ◽  
Author(s):  
Flora M. Li ◽  
Bernhard C. Bayer ◽  
Stephan Hofmann ◽  
James D. Dutson ◽  
Steve J. Wakeham ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Room Temperature ◽  
Oxide Films ◽  
High Rate ◽  
High K ◽  
Temperature Deposition
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