Growth mechanism of highly uniform InAs/GaAs quantum dot with periodic arsine interruption by metalorganic chemical vapor deposition
2006 ◽
Vol 24
(4)
◽
pp. 1922
2000 ◽
Vol 39
(Part 1, No. 7A)
◽
pp. 3860-3862
◽
1991 ◽
Vol 30
(Part 2, No. 4B)
◽
pp. L725-L727
◽