Bias in bonding behavior among boron, carbon, and nitrogen atoms in ion implanted a-BN, a-BC, and diamond like carbon films

AbstractIon-implanted diamond-like carbon (DLC) films have been characterized by techniques based on electron energy-loss spectrometry using an imaging energy filter on a 300kV TEM. Nitrogen implantation results in increased sp2 bonding and a 1.3 eV shift to higher binding energies for carbon-K. Argon implantation results in a smaller increase in sp2bonding with no detectable binding energy shift. The fraction of implanted species retained is much smaller for Ar than for N. Differences in behavior between N- and Ar-implanted DLC are consistent with expected chemical reactions. Preliminary results demonstrate the feasibility of mapping the Φ*/σ* intensity (sp2/sp3) ratio by energy-filtered TEM as an alternative to spectrum imaging in STEM mode

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Optical and electronic properties of nitrogen-implanted diamond-like carbon films

Journal of Materials Research ◽

10.1557/jmr.1994.0085 ◽

1994 ◽

Vol 9 (1) ◽

pp. 85-90 ◽

Cited By ~ 29

Author(s):

G.L. Doll ◽

J.P. Heremans ◽

T.A. Perry ◽

J.V. Mantese

Keyword(s):

Amorphous Carbon ◽

Carbon Film ◽

Film Surface ◽

Carbon Films ◽

Localized States ◽

Diamond Like Carbon ◽

Nitrogen Implantation ◽

Electrical Measurements ◽

Nitrogen Ion ◽

Ion Implanted

Optical and electrical measurements on nitrogen ion-implanted diamond-like carbon films are presented. Raman scattering measurements, which probe the crystallinity of the film surface, indicate that nitrogen implantation reduces the finite crystallographic order in the pristine carbon films. The absence of molecular vibrations in the infrared absorption spectra of the films argues against a polymeric structure of the ion-implanted films. Spectroscopic ellipsometry experiments determine the change in the optical constants of the carbon film due to nitrogen implantation. Electrical de conductivity measurements are interpreted within the framework of a schematic density of states picture of graphitic τ-electrons in an amorphous carbon system. Taken collectively, the optical and electrical measurements suggest that nitrogen implantation increases the density of localized states within the 1.5 eV bandgap of the quasi-amorphous carbon film, thereby reducing the bandgap and increasing the conductivity of the nitrogen-implanted films.

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Field-emission properties of diamond-like-carbon and nitrogen-doped diamond-like-carbon films prepared by electrochemical deposition

Applied Physics A ◽

10.1007/s00339-004-3069-0 ◽

2005 ◽

Vol 81 (1) ◽

pp. 41-46 ◽

Cited By ~ 12

Author(s):

X. Yan ◽

T. Xu ◽

G. Chen ◽

S. Xu ◽

S. Yang

Keyword(s):

Field Emission ◽

Electrochemical Deposition ◽

Carbon Films ◽

Diamond Like Carbon ◽

Emission Properties ◽

Carbon And Nitrogen ◽

Nitrogen Doped ◽

Field Emission Properties

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Tribological properties of graded diamond-like carbon films on Ti ion-implanted aluminum substrate

Diamond and Related Materials ◽

10.1016/j.diamond.2007.12.025 ◽

2008 ◽

Vol 17 (11) ◽

pp. 1844-1849 ◽

Cited By ~ 19

Author(s):

Ming Xu ◽

Xun Cai ◽

Youming Liu ◽

Shihao Pu ◽

Paul K. Chu

Keyword(s):

Tribological Properties ◽

Carbon Films ◽

Aluminum Substrate ◽

Diamond Like Carbon ◽

Ion Implanted

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Bonding in Ion-Implanted Diamond-Like Carbon Films Characterized by TEM Spectrum Lines and Energy-Filtered Imaging

Microscopy and Microanalysis ◽

10.1017/s1431927600033262 ◽

2000 ◽

Vol 6 (S2) ◽

pp. 154-155 ◽

Cited By ~ 1

Author(s):

J. Bentley ◽

K.C. Walter ◽

N.D. Evans

Keyword(s):

Plasma Deposition ◽

Incident Beam ◽

Carbon Films ◽

Diamond Like Carbon ◽

Elemental Distribution ◽

Distribution Maps ◽

Window Method ◽

User Facility ◽

Elemental Maps ◽

Ion Implanted

Many of the electrical, mechanical, and electrochemical properties of diamond-like carbon (DLC) coatings are determined by the amount of sp3 bonding. Correlations of bonding and properties are important in efforts to optimize coatings for specific applications. DLC thin films were grown at LANL by plasma deposition and subsequently ion implanted with N or Ar. Cross-sectioned TEM specimens were characterized with a Gatan imaging filter (GIF) interfaced to a LaB6 Philips CM30T at the ORNL SHaRE User Facility. For elemental distribution maps the following conditions were used: incident beam divergence α = 2.9 mrad, collection angle β = 4.8 mrad, slit width ΔE = 30 eV, exposure times of typically 5 s, 2x-binned 512×512 images, and TEM magnification ∼2000. The standard 3-window method was used for producing elemental maps with AE-r background extrapolation; 2-window jump-ratio images were also produced.

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