Bonding in Ion-Implanted Carbon Films Characterized by TEM Spectrum Lines and Energy-Filtered Imaging

1999 ◽  
Vol 589 ◽  
Author(s):  
J. Bentley ◽  
K.C. Walter ◽  
N.D. Evans

AbstractIon-implanted diamond-like carbon (DLC) films have been characterized by techniques based on electron energy-loss spectrometry using an imaging energy filter on a 300kV TEM. Nitrogen implantation results in increased sp2 bonding and a 1.3 eV shift to higher binding energies for carbon-K. Argon implantation results in a smaller increase in sp2bonding with no detectable binding energy shift. The fraction of implanted species retained is much smaller for Ar than for N. Differences in behavior between N- and Ar-implanted DLC are consistent with expected chemical reactions. Preliminary results demonstrate the feasibility of mapping the Φ*/σ* intensity (sp2/sp3) ratio by energy-filtered TEM as an alternative to spectrum imaging in STEM mode

1994 ◽  
Vol 9 (1) ◽  
pp. 85-90 ◽  
Author(s):  
G.L. Doll ◽  
J.P. Heremans ◽  
T.A. Perry ◽  
J.V. Mantese

Optical and electrical measurements on nitrogen ion-implanted diamond-like carbon films are presented. Raman scattering measurements, which probe the crystallinity of the film surface, indicate that nitrogen implantation reduces the finite crystallographic order in the pristine carbon films. The absence of molecular vibrations in the infrared absorption spectra of the films argues against a polymeric structure of the ion-implanted films. Spectroscopic ellipsometry experiments determine the change in the optical constants of the carbon film due to nitrogen implantation. Electrical de conductivity measurements are interpreted within the framework of a schematic density of states picture of graphitic τ-electrons in an amorphous carbon system. Taken collectively, the optical and electrical measurements suggest that nitrogen implantation increases the density of localized states within the 1.5 eV bandgap of the quasi-amorphous carbon film, thereby reducing the bandgap and increasing the conductivity of the nitrogen-implanted films.


1993 ◽  
Vol 316 ◽  
Author(s):  
Gregory P. Johnston ◽  
Prabhat Tiwari ◽  
Donald J. Rej ◽  
Harold A. Davis ◽  
William J. Waganaar ◽  
...  

ABSTRACTDiamond-like carbon films were prepared by high intensity pulsed ion beam ablation of graphite targets. A 350 keV, 35 kA, 400 ns pulse width beam, consisting primarily of carbon ions and protons, was focused onto a graphite target at a fluence of 15-45 J/cm2. Films were deposited onto substrates positioned in an angular array from normal to the target to 90° off normal. Deposition rates up to 30 nm per pulse, corresponding to an instantaneous deposition rate greater than 1 mm/sec, have been observed. Electrical resistivities between 1 and 1000 ohm·cm were measured for these films. XRD scans showed that no crystalline structure developed in the films. SEM revealed that the bulk of the films contain material with feature sizes on the order of 100 nm, but micron size particles were deposited as well. Both Raman and electron energy loss spectroscopy indicated significant amounts of sp3 bonded carbon present in most of the films.


1979 ◽  
Vol 61 (2) ◽  
pp. L1-L4 ◽  
Author(s):  
Chr. Weissmantel ◽  
K. Bewilogua ◽  
C. Schürer ◽  
K. Breuer ◽  
H. Zscheile

2008 ◽  
Vol 17 (11) ◽  
pp. 1844-1849 ◽  
Author(s):  
Ming Xu ◽  
Xun Cai ◽  
Youming Liu ◽  
Shihao Pu ◽  
Paul K. Chu

2000 ◽  
Vol 6 (S2) ◽  
pp. 154-155 ◽  
Author(s):  
J. Bentley ◽  
K.C. Walter ◽  
N.D. Evans

Many of the electrical, mechanical, and electrochemical properties of diamond-like carbon (DLC) coatings are determined by the amount of sp3 bonding. Correlations of bonding and properties are important in efforts to optimize coatings for specific applications. DLC thin films were grown at LANL by plasma deposition and subsequently ion implanted with N or Ar. Cross-sectioned TEM specimens were characterized with a Gatan imaging filter (GIF) interfaced to a LaB6 Philips CM30T at the ORNL SHaRE User Facility. For elemental distribution maps the following conditions were used: incident beam divergence α = 2.9 mrad, collection angle β = 4.8 mrad, slit width ΔE = 30 eV, exposure times of typically 5 s, 2x-binned 512×512 images, and TEM magnification ∼2000. The standard 3-window method was used for producing elemental maps with AE-r background extrapolation; 2-window jump-ratio images were also produced.


2000 ◽  
Vol 6 (S2) ◽  
pp. 1048-1049
Author(s):  
I.M. Anderson

Spectrum imaging, where a full spectrum is acquired at each pixel in a two-dimensional array, provides a new paradigm for materials characterization that combines the advantages of traditional paradigms for imaging and analysis in electron optical characterization. Traditionally, electron optical imaging (e.g., secondary electron imaging of electron-opaque or bright-field imaging of electron-transparent specimens) emphasizes contrast production among distinct features of the microstructure. An excellent survey of the specimen microstructure is achieved - many pixels are acquired - but typically no quantitative analysis of image intensities is performed. In contrast, electron optical analysis techniques traditionally concentrate on quantitative elemental analysis (e.g., electron probe microanalysis), or at least comprehensive qualitative analysis through full spectrum acquisition (e.g., energy-dispersive X-ray or electron energy-loss spectrometry). However, these analyses are typically performed at only a few locations on the specimen, which are pre-selected on the basis of the image contrast generated as described above.


2011 ◽  
Vol 110 (7) ◽  
pp. 074906 ◽  
Author(s):  
Mustafa Fatih Genisel ◽  
Md. Nizam Uddin ◽  
Zafer Say ◽  
Mustafa Kulakci ◽  
Rasit Turan ◽  
...  

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