Monte Carlo simulation of high-field electron transport in GaAs using an analytical band-structure model

1997 ◽  
Vol 81 (7) ◽  
pp. 3160-3169 ◽  
Author(s):  
O. Mouton ◽  
J. L. Thobel ◽  
R. Fauquembergue
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Transport ◽  
Band Structure ◽  
High Field ◽  
Structure Model ◽  
Field Electron ◽  
Band Structure Model

Monte Carlo simulation of high field electron transport in ZnS

1995 ◽  
Vol 38 (3) ◽  
pp. 653-660 ◽  
Author(s):  
J. Fogarty ◽  
W. Kong ◽  
R. Solanki
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Transport ◽  
High Field ◽  
Field Electron

Ensemble Monte Carlo analysis of subpicosecond transient electron transport in cubic and hexagonal silicon carbide for high power SiC-MESFET devices

2015 ◽  
Vol 29 (16) ◽  
pp. 1550107 ◽  
Author(s):  
Youcef Belhadji ◽  
Benyounes Bouazza ◽  
Fateh Moulahcene ◽  
Nordine Massoum
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
High Temperature ◽  
Electron Transport ◽  
Band Structure ◽  
Monte Carlo Analysis ◽  
Structure Model ◽  
Velocity Overshoot ◽  
Ensemble Monte Carlo ◽  
Band Structure Model

In a comparative framework, an ensemble Monte Carlo was used to elaborate the electron transport characteristics in two different silicon carbide (SiC) polytypes 3C-SiC and 4H-SiC. The simulation was performed using three-valley band structure model. These valleys are spherical and nonparabolic. The aim of this work is to forward the trajectory of 20,000 electrons under high-flied (from 50 kV to 600 kV) and high-temperature (from 200 K to 700 K). We note that this model has already been used in other studies of many Zincblende or Wurtzite semiconductors. The obtained results, compared with results found in many previous studies, show a notable drift velocity overshoot. This last appears in subpicoseconds transient regime and this overshoot is directly attached to the applied electric field and lattice temperature.

Full band Monte Carlo simulations of high-field electron transport in wide band-gap semiconductors

2004 ◽  
Vol 19 (4) ◽  
pp. S206-S208 ◽  
Author(s):  
Niels Fitzer ◽  
Angelika Kuligk ◽  
Ronald Redmer ◽  
Martin Städele ◽  
Stephen M Goodnick ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Band Gap ◽  
High Field ◽  
Wide Band ◽  
Wide Band Gap ◽  
Field Electron ◽  
Full Band ◽  
Wide Band Gap Semiconductors

High‐field electron transport for ellipsoidal multivalley band structure of silicon

1992 ◽  
Vol 72 (10) ◽  
pp. 4700-4704 ◽  
Author(s):  
Ganesh Samudra ◽  
Soo Jin Chua ◽  
Ajoy K. Ghatak ◽  
Vijay K. Arora
Keyword(s):  
Electron Transport ◽  
Band Structure ◽  
High Field ◽  
Field Electron

Full-band Monte Carlo simulations of high-field electron transport in GaAs and ZnS

2003 ◽  
Vol 67 (20) ◽  
Author(s):  
Niels Fitzer ◽  
Angelika Kuligk ◽  
Ronald Redmer ◽  
Martin Städele ◽  
Stephen M. Goodnick ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
High Field ◽  
Field Electron ◽  
Full Band

Monte Carlo Investigation of High-Field Electron Transport Characteristics in ZnMgO/ZnO Heterostructures

2016 ◽  
Vol 63 (1) ◽  
pp. 517-523 ◽  
Author(s):  
Ping Wang ◽  
Xuefei Shan ◽  
Lixin Guo ◽  
Shengxia Ma ◽  
Hongyan Chen ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
High Field ◽  
Field Electron ◽  
Monte Carlo Investigation
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