Ab-initio simulations of deformation potentials and electron mobility in chemically modified graphene and two-dimensional hexagonal boron-nitride

We present a performance assessment of graphene/hexagonal Boron Nitride heterojunctions based transistors able to provide large current modulation. The study is performed by means of a multi-scale approach leveraging ab-initio simulations to capture the physics at the atomic scale, and tight-binding simulations to compute transport. In particular, we focus on two technological solutions, a vertical and a planar structure both able to provide large Ion/Ioff ratios. As we will show, due to reduced capacitative coupling, the planar structure outperforms the vertical device as far as digital applications are concerned.

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High Photoresponse Black Phosphorus TFTs Capping with Transparent Hexagonal Boron Nitride

Membranes ◽

10.3390/membranes11120952 ◽

2021 ◽

Vol 11 (12) ◽

pp. 952

Author(s):

Dewu Yue ◽

Ximing Rong ◽

Shun Han ◽

Peijiang Cao ◽

Yuxiang Zeng ◽

...

Keyword(s):

Boron Nitride ◽

Electron Mobility ◽

Hexagonal Boron Nitride ◽

Black Phosphorus ◽

Two Dimensional ◽

Critical Material ◽

Device Applications ◽

Uv Visible ◽

Spectral Ranges ◽

Very High

Black phosphorus (BP), a single elemental two-dimensional (2D) material with a sizable band gap, meets several critical material requirements in the development of future nanoelectronic applications. This work reports the ambipolar characteristics of few-layer BP, induced using 2D transparent hexagonal boron nitride (h-BN) capping. The 2D h-BN capping have several advantages over conventional Al2O3 capping in flexible and transparent 2D device applications. The h-BN capping technique was used to achieve an electron mobility in the BP devices of 73 cm2V−1s−1, thereby demonstrating n-type behavior. The ambipolar BP devices exhibited ultrafast photodetector behavior with a very high photoresponsivity of 1980 mA/W over the ultraviolet (UV), visible, and infrared (IR) spectral ranges. The h-BN capping process offers a feasible approach to fabricating n-type behavior BP semiconductors and high photoresponse BP photodetectors.

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Tunnel magnetoresistance with atomically thin two-dimensional hexagonal boron nitride barriers

Nano Research ◽

10.1007/s12274-014-0627-4 ◽

2014 ◽

Vol 8 (4) ◽

pp. 1357-1364 ◽

Cited By ~ 60

Author(s):

André Dankert ◽

M. Venkata Kamalakar ◽

Abdul Wajid ◽

R. S. Patel ◽

Saroj P. Dash

Keyword(s):

Boron Nitride ◽

Hexagonal Boron Nitride ◽

Two Dimensional ◽

Tunnel Magnetoresistance

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Synthesis of centimeter-scale high-quality polycrystalline hexagonal boron nitride films from the Fe flux

Nanoscale ◽

10.1039/d1nr02408f ◽

2021 ◽

Author(s):

Yifei Li ◽

Xin Wen ◽

Changjie Tan ◽

Ning Li ◽

Ruijie Li ◽

...

Keyword(s):

Boron Nitride ◽

Hexagonal Boron Nitride ◽

Two Dimensional ◽

High Quality ◽

Boron Nitride Films

Owing to its irreplaceable roles in new functional devices, such as universal substrates and excellent layered insulators, high-quality hexagonal BN (hBN) crystals are exceedingly required in the field of two-dimensional...

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