Small-signal deep level transient spectroscopy on hydrogenated amorphous silicon based metal/insulator/semiconductor structures

1998 ◽  
Vol 84 (12) ◽  
pp. 6906-6910 ◽  
Author(s):  
Ilja Thurzo ◽  
Vojtech Nádaždy ◽  
Satoshi Teramura ◽  
Rudolf Durný ◽  
Minoru Kumeda ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Hydrogenated Amorphous Silicon ◽  
Small Signal ◽  
Metal Insulator ◽  
Semiconductor Structures ◽  
Transient Spectroscopy ◽  
Silicon Based ◽  
Hydrogenated Amorphous

scholarly journals Electrically Active Defects In Solar Cells Based On Amorphous Silicon/Crystalline Silicon Heterojunction After Irradiation By Heavy Xe Ions

2015 ◽  
Vol 66 (6) ◽  
pp. 323-328 ◽  
Author(s):  
Ladislav Harmatha ◽  
Miroslav Mikolášek ◽  
L’ubica Stuchlíková ◽  
Arpád Kósa ◽  
Milan Žiška ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Heavy Ions ◽  
Deep Level Transient Spectroscopy ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Different Types ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Hydrogenated Amorphous

Abstract The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 108 cm−2 to 5 × 1010 cm−2. Radiation defects induced in the bulk of Si and at the hydrogenated amorphous silicon and crystalline silicon (a-Si:H/c-Si) interface were identified by Deep Level Transient Spectroscopy (DLTS). Radiation induced A-centre traps, boron vacancy traps and different types of divacancies with a high value of activation energy were observed. With an increased fluence of heavy ions the nature and density of the radiation induced defects was changed.

Effects of Substrate Parameters on Amorphous-Crystalline Silicon Interface

1991 ◽  
Vol 219 ◽  
Author(s):  
U. Besi Vetrella ◽  
J. D. Cohen
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Hydrogenated Amorphous Silicon ◽  
Substrate Preparation ◽  
Transient Spectroscopy ◽  
Oxide Contamination ◽  
Silicon Interface ◽  
Hydrogenated Amorphous ◽  
Density Of Interface States

ABSTRACTCapacitance vs. temperature, deep-level transient spectroscopy (DLTS), and transient photocapacitance spectroscopy have been used to investigate the amorphous-crystalline silicon interface region of a device made of hydrogenated amorphous silicon deposited on a lightly doped n-type crystalline silicon.By comparing our results between substrates with and without oxide contamination with those in a earlier study, we have been able to correlate the effects of substrate preparation on the density of interface states.

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