Defect creation and removal in hydrogenated amorphous silicon predicted by the defect-pool model and revealed by the quasistatic capacitance of metal-insulator-semiconductor structures

1997 ◽  
Vol 55 (16) ◽  
pp. R10181-R10184 ◽  
Author(s):  
J. P. Kleider ◽  
F. Dayoub
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
Defect Creation ◽  
Pool Model ◽  
Hydrogenated Amorphous

Light Induced Changes in the Non-Gaussian Noise Statistics in Doped Hydrogenated Amorphous Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Gaussian Noise ◽  
Hydrogenated Amorphous Silicon ◽  
Noise Power ◽  
Defect Creation ◽  
Non Gaussian ◽  
Noise Statistics ◽  
Induced Changes ◽  
Many Body Interactions ◽  
Hydrogenated Amorphous

The power spectrum of coplanar current fluctuations in n-type doped hydrogenated amorphous silicon (a-Si:H) has been measured before and after metastable defect creation by light soaking. The average magnitude and spectral slope of the 1/f noise are not affected by illumination, however significant changes in the higher order statistics are observed. Associated with the decrease of conductivity upon light soaking (the Staebler-Wronski effect), there is a decrease in the correlation of the noise power which characterize the non-Gaussian noise in the annealed state. These changes in the noise statistics are reversible by annealing. The light-induced changes in the non-Gaussian statistics provide experimental support for models of light induced defect creation which involve long-ranged and many body interactions.

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