Observation of electron and hole traps in hydrogenated amorphous silicon by voltage- and laser-excited deep level transient spectroscopy

Abstract The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 108 cm−2 to 5 × 1010 cm−2. Radiation defects induced in the bulk of Si and at the hydrogenated amorphous silicon and crystalline silicon (a-Si:H/c-Si) interface were identified by Deep Level Transient Spectroscopy (DLTS). Radiation induced A-centre traps, boron vacancy traps and different types of divacancies with a high value of activation energy were observed. With an increased fluence of heavy ions the nature and density of the radiation induced defects was changed.

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Effects of Substrate Parameters on Amorphous-Crystalline Silicon Interface

MRS Proceedings ◽

10.1557/proc-219-819 ◽

1991 ◽

Vol 219 ◽

Author(s):

U. Besi Vetrella ◽

J. D. Cohen

Keyword(s):

Deep Level Transient Spectroscopy ◽

Crystalline Silicon ◽

Deep Level ◽

Hydrogenated Amorphous Silicon ◽

Substrate Preparation ◽

Transient Spectroscopy ◽

Oxide Contamination ◽

Silicon Interface ◽

Hydrogenated Amorphous ◽

Density Of Interface States

ABSTRACTCapacitance vs. temperature, deep-level transient spectroscopy (DLTS), and transient photocapacitance spectroscopy have been used to investigate the amorphous-crystalline silicon interface region of a device made of hydrogenated amorphous silicon deposited on a lightly doped n-type crystalline silicon.By comparing our results between substrates with and without oxide contamination with those in a earlier study, we have been able to correlate the effects of substrate preparation on the density of interface states.

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Electron Relaxation Properties and Transient Spectroscopy of Hydrogenated Amorphous Silicon

Japanese Journal of Applied Physics ◽

10.1143/jjap.26.524 ◽

1987 ◽

Vol 26 (Part 1, No. 4) ◽

pp. 524-530 ◽

Cited By ~ 1

Author(s):

R. Q. Han ◽

P. F. Tua ◽

J. Ruvalds ◽

K. L. Ngai

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Relaxation Properties ◽

Electron Relaxation ◽

Transient Spectroscopy ◽

Hydrogenated Amorphous

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Deep levels in n-type Schottky and p+-n homojunction GaN diodes

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300005275 ◽

2000 ◽

Vol 5 (S1) ◽

pp. 922-928

Author(s):

A. Hierro ◽

D. Kwon ◽

S. A. Ringel ◽

M. Hansen ◽

U. K. Mishra ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Minority Carrier ◽

Deep Level ◽

Schottky Diodes ◽

Yellow Luminescence ◽

Arrhenius Behavior ◽

Electron Level ◽

Transient Spectroscopy ◽

Electron And Hole Traps

The deep level spectra in both p+-n homojunction and n-type Schottky GaN diodes are studied by deep level transient spectroscopy (DLTS) in order to compare the role of the junction configuration on the defects found within the n-GaN layer. Both majority and minority carrier DLTS measurements are performed on the diodes allowing the observation of both electron and hole traps in n-GaN. An electron level at Ec−Et=0.58 and 0.62 V is observed in the p+-n and Schottky diodes, respectively, with a concentration of ∼3−4×1014 cm−3 and a capture cross section of ∼1−5×10−15 cm2. The similar Arrhenius behavior indicates that both emissions are related to the same defect. The shift in activation energy is correlated to the electric field enhanced-emission in the p+-n diode, where the junction barrier is much larger. The p+-n diode configuration allows the observation of a hole trap at Et−Ev=0.87 eV in the n-GaN which is very likely related to the yellow luminescence band.

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