Characterization of the hole capacitance of hydrogenated amorphous silicon metal–insulator–semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1419268 ◽

2001 ◽

Vol 90 (12) ◽

pp. 6226-6229 ◽

Author(s):

Hyuk-Ryeol Park ◽

Suk-Ho Lee ◽

Byung-Taek Lee

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Hydrogenated Amorphous

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Defect creation and removal in hydrogenated amorphous silicon predicted by the defect-pool model and revealed by the quasistatic capacitance of metal-insulator-semiconductor structures

Physical Review B ◽

10.1103/physrevb.55.r10181 ◽

1997 ◽

Vol 55 (16) ◽

pp. R10181-R10184 ◽

Author(s):

J. P. Kleider ◽

F. Dayoub

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Defect Creation ◽

Hydrogenated Amorphous

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Small-signal deep level transient spectroscopy on hydrogenated amorphous silicon based metal/insulator/semiconductor structures

Journal of Applied Physics ◽

10.1063/1.368978 ◽

1998 ◽

Vol 84 (12) ◽

pp. 6906-6910 ◽

Author(s):

Ilja Thurzo ◽

Vojtech Nádaždy ◽

Satoshi Teramura ◽

Rudolf Durný ◽

Minoru Kumeda ◽

...

Keyword(s):

Amorphous Silicon ◽

Deep Level Transient Spectroscopy ◽

Hydrogenated Amorphous Silicon ◽

Small Signal ◽

Metal Insulator ◽

Semiconductor Structures ◽

Transient Spectroscopy ◽

Silicon Based ◽

Hydrogenated Amorphous

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Characterization of hydrogenated amorphous silicon carbide films

10.1117/12.57018 ◽

1992 ◽

Author(s):

S. Uthanna

Keyword(s):

Silicon Carbide ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous

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Characterization of interface electrical properties in SiO2/InSb metal/insulator/semiconductor structures prepared by plasma-enhanced chemical vapour deposition

Thin Solid Films ◽

10.1016/0040-6090(87)90317-8 ◽

1987 ◽

Vol 148 (3) ◽

pp. 243-250 ◽

Author(s):

K.G. Germanova ◽

E.P. Valcheva

Keyword(s):

Electrical Properties ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Fabrication and characterization of metal/insulator/semiconductor structures based on TiO2 and TiO2/SiO2 thin films prepared by low-temperature arc vapor deposition

Electronic Materials Letters ◽

10.1007/s13391-013-3244-6 ◽

2014 ◽

Vol 10 (3) ◽

pp. 579-584 ◽

Author(s):

Kumar Shubham ◽

P. Chakrabarti

Keyword(s):

Low Temperature ◽

Vapor Deposition ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Fabrication And Characterization

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Fabrication and characterization of hydrogenated amorphous silicon films, CVD diamond films, and their devices

10.31274/rtd-180813-12799 ◽

1994 ◽

Author(s):

Hao Jia

Keyword(s):

Amorphous Silicon ◽

Diamond Films ◽

Hydrogenated Amorphous Silicon ◽

Cvd Diamond ◽

Silicon Films ◽

Fabrication And Characterization ◽

Hydrogenated Amorphous

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Preparation and characterization of hydrogenated amorphous-silicon films produced by ion plating and hydrogenated amorphous-boron films produced by glow-discharge decomposition. Final report, April 1, 1980-May 31, 1981

10.2172/5962055 ◽

1981 ◽

Author(s):

F. Cocks ◽

P. Jones

Keyword(s):

Glow Discharge ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Silicon Films ◽

Final Report ◽

Amorphous Boron ◽

Ion Plating ◽

Hydrogenated Amorphous

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Conductivity and magnetoresistance of hydrogenated amorphous silicon-nickel alloys near the metal-insulator transition

Journal of Physics Condensed Matter ◽

10.1088/0953-8984/4/46/017 ◽

1992 ◽

Vol 4 (46) ◽

pp. 9113-9130 ◽

Author(s):

K M Abkemeier ◽

C J Adkins ◽

R Asal ◽

E A Davis

Keyword(s):

Amorphous Silicon ◽

Nickel Alloys ◽

Hydrogenated Amorphous Silicon ◽

Insulator Transition ◽

Metal Insulator Transition ◽

Metal Insulator ◽

Hydrogenated Amorphous

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Characterization of metal–ferroelectric–metal–insulator–semiconductor structures using ferroelectric Al-doped HfO2 thin films prepared by atomic-layer deposition with different O3 doses

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab2c62 ◽

2019 ◽

Vol 58 (7) ◽

pp. 070907 ◽

Author(s):

So-Yeong Na ◽

So-Jung Yoon ◽

Seung-Youl Kang ◽

Seung-Eon Moon ◽

Sung-Min Yoon

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Layer Deposition

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Measurement and characterization of interface state tunneling in metal-insulator-semiconductor structures

Solid-State Electronics ◽

10.1016/0038-1101(86)90140-1 ◽

1986 ◽

Vol 29 (6) ◽

pp. 597-606 ◽

Author(s):

Sanjay Jain ◽

Walter E. Dahlke

Keyword(s):

Interface State ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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