Effects of Substrate Parameters on Amorphous-Crystalline Silicon Interface
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ABSTRACTCapacitance vs. temperature, deep-level transient spectroscopy (DLTS), and transient photocapacitance spectroscopy have been used to investigate the amorphous-crystalline silicon interface region of a device made of hydrogenated amorphous silicon deposited on a lightly doped n-type crystalline silicon.By comparing our results between substrates with and without oxide contamination with those in a earlier study, we have been able to correlate the effects of substrate preparation on the density of interface states.
2015 ◽
Vol 66
(6)
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pp. 323-328
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2015 ◽
Vol 411
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pp. 119-124
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2018 ◽
Vol 36
(4)
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pp. 041201
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