Temperature dependence of the transfer characteristics of polysilicon thin film transistors fabricated by excimer laser crystallization

1999 ◽  
Vol 85 (1) ◽  
pp. 616-618 ◽  
Author(s):  
V. Foglietti ◽  
L. Mariucci ◽  
G. Fortunato
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Crystallization ◽  
Transfer Characteristics ◽  
Excimer Laser Crystallization

High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization

2018 ◽  
Vol 39 (3) ◽  
pp. 367-370 ◽  
Author(s):  
Chan-Yu Liao ◽  
Shih-Hung Chen ◽  
Wen-Hsien Huang ◽  
Chang-Hong Shen ◽  
Jia-Min Shieh ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
High Performance ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Recessed Channel

Bottom-Gate Thin-Film Transistors Fabricated by Excimer Laser Annealing

2013 ◽  
Vol 811 ◽  
pp. 177-180
Author(s):  
Jyh Liang Wang ◽  
Chun Chien Tsai ◽  
Chuan Chou Hwang ◽  
Tsang Yen Hsieh
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
High Performance ◽  
Laser Annealing ◽  
Electrical Characteristics ◽  
Laser Crystallization ◽  
Excimer Laser Annealing ◽  
Excimer Laser Crystallization ◽  
Bottom Gate

High performance and device uniformity n-channel low-temperature poly-silicon (LTPS) bottom-gate (BG) thin film transistors (TFTs) with artificially-controlled lateral grain growth have been performed by excimer laser crystallization (ELC). The BG TFTs (W/L = 1.5 μm/1.5 μm) demonstrate field-effect-mobility of 323 cm2/Vs and high Ion/Ioff of 9.5 × 108. The proposed BG TFTs reveal the superior electrical characteristics, device uniformity, and reliability than conventional top-gate ones.

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