New excimer‐laser‐crystallization method for producing large‐grained and grain boundary‐location‐controlled Si films for thin film transistors
2012 ◽
Vol 33
(11)
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pp. 1562-1564
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1993 ◽
Vol 40
(1)
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pp. 112-117
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2012 ◽
Vol 12
(7)
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pp. 5505-5509
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2018 ◽
Vol 39
(3)
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pp. 367-370
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2007 ◽
Vol 28
(7)
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pp. 599-602
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2016 ◽
Vol 37
(9)
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pp. 1135-1138
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2008 ◽
Vol 52
(3)
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pp. 365-371
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