Laser-induced fluorescence from collisionally excited Si atoms in laser ablation plume

1999 ◽  
Vol 86 (7) ◽  
pp. 3964-3972 ◽  
Author(s):  
Akiko Okano ◽  
Kunio Takayanagi
Keyword(s):  
Laser Ablation ◽  
Laser Induced Fluorescence ◽  
Ablation Plume

Deposition of Epitaxially Oriented Films of Cubic SiC on Silicon by Laser Ablation of Elemental Targets.

1994 ◽  
Vol 339 ◽  
Author(s):  
L. Rimai ◽  
R. Ager ◽  
W. H. Weber ◽  
J. Hangas ◽  
B. D. Poindexter
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Crystalline Silicon ◽  
Epitaxial Films ◽  
Ablation Plume ◽  
Silicon Substrates ◽  
Pure Silicon ◽  
Silicon Target ◽  
Oriented Films ◽  
Pure Carbon

ABSTRACTSilicon carbide films are grown epitaxially on crystalline silicon substrates heated above 1000 °C, by laser ablation of pure carbon targets to thicknesses between 300 and 400 nm. These films grow on top of the silicon substrate from the carbon in the ablation plume and from the silicon of the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 μm with part of the silicon being supplied by the ablation plume of the silicon target.

Expansion dynamics and equilibrium conditions in a laser ablation plume of lithium: Modeling and experiment

2005 ◽  
Vol 97 (6) ◽  
pp. 064904 ◽  
Author(s):  
M. W. Stapleton ◽  
A. P. McKiernan ◽  
J.-P. Mosnier
Keyword(s):  
Laser Ablation ◽  
Ablation Plume ◽  
Equilibrium Conditions
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