High efficiency thin film cadmium telluride solar cells

1992 ◽  
Author(s):  
T. L. Chu ◽  
Shirley S. Chu ◽  
J. Britt ◽  
G. Chen ◽  
C. Ferekides ◽  
...  

1991 ◽  
Vol 23 (2-4) ◽  
pp. 388-393 ◽  
Author(s):  
A.K. Turner ◽  
J.M. Woodcock ◽  
M.E. Ozsan ◽  
J.G. Summers ◽  
J. Barker ◽  
...  




Author(s):  
A. K. Turner ◽  
J. M. Woodcock ◽  
M. E. Őzsan ◽  
J. G. Summers


MRS Bulletin ◽  
1993 ◽  
Vol 18 (10) ◽  
pp. 45-47 ◽  
Author(s):  
T. Suntola

Cadmium telluride is currently the most promising material for high efficiency, low-cost thin-film solar cells. Cadmium telluride is a compound semiconductor with an ideal 1.45 eV bandgap for direct light-to-electricity conversion. The light absorption coefficient of CdTe is high enough to make a one-micrometer-thick layer of material absorb over 99% of the visible light. Processing homogenous polycrystalline thin films seems to be less critical for CdTe than for many other compound semiconductors. The best small-area CdTe thin-film cells manufactured show more than 15% conversion efficiency. Large-area modules with aperture efficiencies in excess of 10% have also been demonstrated. The long-term stability of CdTe solar cell structures is not known in detail or in the necessary time span. Indication of good stability has been demonstrated. One of the concerns about CdTe solar cells is the presence of cadmium which is an environmentally hazardous material.



2013 ◽  
Vol 1493 ◽  
pp. 147-152 ◽  
Author(s):  
J.M. Walls ◽  
A. Abbas ◽  
G. D. West ◽  
J.W. Bowers ◽  
P.J.M. Isherwood ◽  
...  

ABSTRACTIt is well known that the cadmium chloride annealing treatment is an essential step in the manufacture of efficient thin film cadmium telluride solar cells. It has been recognized that the combination of annealing at ∼4000C together with the addition of cadmium chloride at the surface induces re-crystallisation of the cadmium telluride layer and also affects the n-type cadmium sulfide. We have applied advanced micro-structural characterization techniques to distinguish the effect of the annealing and the cadmium chloride treatments on the properties of the cadmium telluride deposited via close space sublimation (CSS) and relate these observations to device performance. Transmission electron microscopy (TEM) has shown a variation in stacking fault density with annealing temperature and annealing time. Stacking faults observed within the cadmium telluride grains in TEM were partially removed post annealing; these findings show that temperature alone has a role in the reduction of stacking faults. However, since we have previously observed almost complete removal of stacking faults with annealing in combination with cadmium chloride, the cadmium chloride is essential to defect removal and high efficiency cells.







Author(s):  
Dipendra Pokhrel ◽  
Ebin Bastola ◽  
Kamala Khanal Subedi ◽  
Adam Phillips ◽  
Micheal J Heben ◽  
...  


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