Molecular orbital calculations on methyl alkyls and hydrides used in the organometallic vapor phase epitaxy of some III–V semiconductor films. I

1991 ◽  
Vol 94 (4) ◽  
pp. 2894-2905 ◽  
Author(s):  
Arthur H. Edwards ◽  
K. A. Jones
Keyword(s):  
Molecular Orbital ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Molecular Orbital Calculations ◽  
Organometallic Vapor Phase Epitaxy ◽  
Semiconductor Films

Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy

1995 ◽  
Vol 67 (12) ◽  
pp. 1721-1723 ◽  
Author(s):  
W. I. Lee ◽  
T. C. Huang ◽  
J. D. Guo ◽  
M. S. Feng
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Deep Levels ◽  
Organometallic Vapor Phase Epitaxy

Monocrystalline InN Films Grown at High Rate by Organometallic Vapor Phase Epitaxy with Nitrogen Plasma Activation Supported by Gyrotron Radiation

2013 ◽  
Vol 52 (11R) ◽  
pp. 110201 ◽  
Author(s):  
Alexander Vodopyanov ◽  
Yurii Buzynin ◽  
Dmitry Mansfeld ◽  
Oleg Khrykin ◽  
Yurii Drozdov ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Nitrogen Plasma ◽  
Vapor Phase Epitaxy ◽  
High Rate ◽  
Organometallic Vapor Phase Epitaxy ◽  
Plasma Activation
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