Spectra and relaxation of Hg atoms and molecules in low temperature matrices. III. Hgm and HgmXn (X=H2O and NH3) systems in rare gas matrices

1994 ◽  
Vol 100 (8) ◽  
pp. 5475-5480 ◽  
Author(s):  
C. Crépin ◽  
A. Tramer
2004 ◽  
Vol 34 (1) ◽  
pp. 73-82 ◽  
Author(s):  
Ermelinda M.S Maçôas ◽  
Leonid Khriachtchev ◽  
Mika Pettersson ◽  
Jan Lundell ◽  
Rui Fausto ◽  
...  

2000 ◽  
Vol 616 ◽  
Author(s):  
E. Nabighian ◽  
M. C. Bartelt ◽  
X.D. Zhu

AbstractUsing an optical reflectivity difference technique, we monitored the growth of multilayer Xe films on a commensurate monolayer of Xe on Ni(111), from 35 to 60K. A transition occurs near 40K, from rough growth at low temperature to quasi-layer-by-layer growth characterized by persistent oscillations in the reflectivity difference. We discuss this transition in terms of changes in the island formation process and the onset of second layer nucleation. The Xe sticking coefficient at 40K is obtained from the period of the oscillations in the reflectivity difference. We find that the sticking coefficient decreases with increasing fihn thickness at fixed Xe pressure.


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