Structure and magnetic properties of Co-doped ZnO dilute magnetic semiconductors synthesized via hydrothermal method

2012 ◽  
Author(s):  
K. Ghosh ◽  
P. K. Kahol ◽  
S. Bhamidipati ◽  
N. Das ◽  
S. Khanra ◽  
...  
2013 ◽  
Vol 27 (17) ◽  
pp. 1350078 ◽  
Author(s):  
H. L. TAO ◽  
Z. H. ZHANG ◽  
L. L. PAN ◽  
M. HE ◽  
B. SONG ◽  
...  

Effects of oxygen vacancy (Vo) on magnetic properties of Co -doped ZnO are investigated by first principle calculations. The calculated formation energies of Vo with different bonding to Co atom indicate that Vo prefers location near Co atom, implying a strong local interaction between the Co atom and O -vacancy. Induced by Vo, the Co -3d and O -2p valence bands upward shift towards the Fermi level, leading to the presence of additional carriers at the Fermi level. The delocalized carriers and the substitutional Co ion play a key role in the occurrence and stability of ferromagnetism of Co -doped ZnO .


2013 ◽  
Vol 576 ◽  
pp. 59-65 ◽  
Author(s):  
Shaobo Shi ◽  
Yu Yang ◽  
Jianping Xu ◽  
Lan Li ◽  
Xiaosong Zhang ◽  
...  

2014 ◽  
Vol 35 (2) ◽  
pp. 178-183
Author(s):  
魏智强 WEI Zhi-qiang ◽  
张玲玲 ZHANG Ling-ling ◽  
武晓娟 WU Xiao-juan ◽  
吴永富 WU Yong-fu ◽  
王璇 WANG Xuan

2006 ◽  
Vol 422 (4-6) ◽  
pp. 529-533 ◽  
Author(s):  
S. Colis ◽  
H. Bieber ◽  
S. Bégin-Colin ◽  
G. Schmerber ◽  
C. Leuvrey ◽  
...  

2007 ◽  
Vol 999 ◽  
Author(s):  
Deepayan Chakraborti ◽  
John T. Prater ◽  
Jagdish Narayan

AbstractSystematic studies on the epitaxial growth and the effect of n-type (Al,Ga) doping on the magnetic and electrical properties of 2.0 % Cu doped ZnO dilute magnetic semiconducting thin films deposited on c-plane sapphire single crystals by pulsed laser deposition are reported here. An decrease in more than 3 orders of magnitude in resistivity from 2×101 Ohm cm for the 2.0 % Cu doped ZnO to ~5×10-3 Ohm cm for Al and Ga codoped films is observed. This increase in conductivity does not show any effect on ferromagnetic ordering thus contradicting the claim of free carrier mediated exchange as being responsible for ferromagnetic ordering in these DMS systems. A bound magnetic polaron or F-center mediated exchange is a possible explanation for the origin of ferromagnetism in these ZnO based DMS thin films.


2020 ◽  
Vol 126 (7) ◽  
Author(s):  
Zohra Nazir Kayani ◽  
Ayesha Usman ◽  
Hina Nazli ◽  
Riffat Sagheer ◽  
Saira Riaz ◽  
...  

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