Magnetic and Electronic Properties of n-type (Al,Ga) co-doped Zn(Cu)O based Dilute Magnetic Semiconductors

2007 ◽  
Vol 999 ◽  
Author(s):  
Deepayan Chakraborti ◽  
John T. Prater ◽  
Jagdish Narayan
Keyword(s):  
Thin Films ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Magnetic Polaron ◽  
F Center ◽  
Doped Zno ◽  
Ferromagnetic Ordering ◽  
Semiconducting Thin Films ◽  
Ga Doping ◽  
Co Doped

AbstractSystematic studies on the epitaxial growth and the effect of n-type (Al,Ga) doping on the magnetic and electrical properties of 2.0 % Cu doped ZnO dilute magnetic semiconducting thin films deposited on c-plane sapphire single crystals by pulsed laser deposition are reported here. An decrease in more than 3 orders of magnitude in resistivity from 2×101 Ohm cm for the 2.0 % Cu doped ZnO to ~5×10-3 Ohm cm for Al and Ga codoped films is observed. This increase in conductivity does not show any effect on ferromagnetic ordering thus contradicting the claim of free carrier mediated exchange as being responsible for ferromagnetic ordering in these DMS systems. A bound magnetic polaron or F-center mediated exchange is a possible explanation for the origin of ferromagnetism in these ZnO based DMS thin films.

Optical Properties and Ferromagnetism of Fe and Ni Co-doped ZnO Dilute Magnetic Semiconductors

2014 ◽  
Vol 35 (2) ◽  
pp. 178-183
Author(s):  
魏智强 WEI Zhi-qiang ◽  
张玲玲 ZHANG Ling-ling ◽  
武晓娟 WU Xiao-juan ◽  
吴永富 WU Yong-fu ◽  
王璇 WANG Xuan
Keyword(s):  
Optical Properties ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Doped Zno ◽  
Co Doped

Morphological variations of Mn-doped ZnO dilute magnetic semiconductors thin films grown by succesive ionic layer by adsorption reaction method

2013 ◽  
Vol 76 (7) ◽  
pp. 751-755 ◽  
Author(s):  
Subramanian Balamurali ◽  
Rathinam Chandramohan ◽  
Marimuthu Karunakaran ◽  
Thayan Mahalingam ◽  
Padmanaban Parameswaran ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Reaction Method ◽  
Adsorption Reaction ◽  
Morphological Variations ◽  
Doped Zno ◽  
Mn Doped ◽  
Ionic Layer

EFFECTS OF OXYGEN VACANCY ON MAGNETIC PROPERTIES OF COBALT-DOPED ZnO DILUTE MAGNETIC SEMICONDUCTORS

2013 ◽  
Vol 27 (17) ◽  
pp. 1350078 ◽  
Author(s):  
H. L. TAO ◽  
Z. H. ZHANG ◽  
L. L. PAN ◽  
M. HE ◽  
B. SONG ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Oxygen Vacancy ◽  
Fermi Level ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
First Principle ◽  
Doped Zno ◽  
Valence Bands ◽  
Formation Energies ◽  
Co Doped

Effects of oxygen vacancy (Vo) on magnetic properties of Co -doped ZnO are investigated by first principle calculations. The calculated formation energies of Vo with different bonding to Co atom indicate that Vo prefers location near Co atom, implying a strong local interaction between the Co atom and O -vacancy. Induced by Vo, the Co -3d and O -2p valence bands upward shift towards the Fermi level, leading to the presence of additional carriers at the Fermi level. The delocalized carriers and the substitutional Co ion play a key role in the occurrence and stability of ferromagnetism of Co -doped ZnO .

Dielectric and magnetic properties of dilute magnetic semiconductors Ag-doped ZnO thin films

2020 ◽  
Vol 126 (7) ◽  
Author(s):  
Zohra Nazir Kayani ◽  
Ayesha Usman ◽  
Hina Nazli ◽  
Riffat Sagheer ◽  
Saira Riaz ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Zno Thin Films ◽  
Doped Zno

Influence of N Dopant on the Electric and Magnetic Properties of Co Doped ZnO Thin Films

2010 ◽  
Vol 25 (7) ◽  
pp. 711-716 ◽  
Author(s):  
Xue-Tao WANG ◽  
Li-Ping ZHU ◽  
Zhi-Gao YE ◽  
Zhi-Zhen YE ◽  
Bing-Hui ZHAO
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Co Doped

Transport mechanisms in Co-doped ZnO (ZCO) and H-irradiated ZCO polycrystalline thin films

2021 ◽  
Vol 23 (3) ◽  
pp. 2368-2376
Author(s):  
A. Di Trolio ◽  
A. Amore Bonapasta ◽  
C. Barone ◽  
A. Leo ◽  
G. Carapella ◽  
...  
Keyword(s):  
Thin Films ◽  
Opposite Effect ◽  
Transport Mechanisms ◽  
Co Doping ◽  
Polycrystalline Thin Films ◽  
Doped Zno ◽  
Co Doped

Co doping increases the ZnO resistivity (ρ) at high T (HT), whereas it has an opposite effect at low T (LT). H balances the Co effects by neutralizing the ρ increase at HT and strengthening its decrease at LT.

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