Modulation of external electric field on surface states of topological insulator Bi2Se3 thin films

2012 ◽  
Vol 101 (22) ◽  
pp. 223109 ◽  
Author(s):  
Genhua Liu ◽  
Guanghui Zhou ◽  
Yong-Hai Chen
2020 ◽  
Vol 22 (7) ◽  
pp. 3867-3874 ◽  
Author(s):  
Yurong Ruan ◽  
Lu Huang ◽  
Yanmin Yang ◽  
Guigui Xu ◽  
Kehua Zhong ◽  
...  

The electronic structure and charge transfer of Bi2Te2Se and Bi2Se2Te thin films are robust to an external electrical field.


2022 ◽  
Vol 105 (3) ◽  
Author(s):  
Liesbeth Mulder ◽  
Carolien Castenmiller ◽  
Femke J. Witmans ◽  
Steef Smit ◽  
Mark S. Golden ◽  
...  

2015 ◽  
Vol 112 (37) ◽  
pp. 11514-11518 ◽  
Author(s):  
Yea-Lee Lee ◽  
Hee Chul Park ◽  
Jisoon Ihm ◽  
Young-Woo Son

Because topological surface states of a single-crystal topological insulator can exist on all surfaces with different crystal orientations enclosing the crystal, mutual interactions among those states contiguous to each other through edges can lead to unique phenomena inconceivable in normal insulators. Here we show, based on a first-principles approach, that the difference in the work function between adjacent surfaces with different crystal-face orientations generates a built-in electric field around facet edges of a prototypical topological insulator such as Bi2Se3. Owing to the topological magnetoelectric coupling for a given broken time-reversal symmetry in the crystal, the electric field, in turn, forces effective magnetic dipoles to accumulate along the edges, realizing the facet-edge magnetic ordering. We demonstrate that the predicted magnetic ordering is in fact a manifestation of the axion electrodynamics in real solids.


1996 ◽  
Vol 69 (5) ◽  
pp. 632-634 ◽  
Author(s):  
Yoshiko Niki Kunishima ◽  
Masaru Miyayama ◽  
Hiroaki Yanagida

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