Chemical effect of Si+ions on the implantation-induced defects in ZnO studied by a slow positron beam
2004 ◽
Vol 445-446
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pp. 57-59
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2003 ◽
Vol 16
(2)
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pp. S293-S299
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2007 ◽
Vol 4
(10)
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pp. 3646-3649
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2006 ◽
Vol 23
(3)
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pp. 675-677
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1999 ◽
Vol 149
(1-4)
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pp. 175-180
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2004 ◽
Vol 37
(13)
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pp. 1841-1844
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2007 ◽
Vol 4
(10)
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pp. 3659-3663
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