N+ion-implantation-induced defects in ZnO studied with a slow positron beam

2003 ◽  
Vol 16 (2) ◽  
pp. S293-S299 ◽  
Author(s):  
Z Q Chen ◽  
T Sekiguchi ◽  
X L Yuan ◽  
M Maekawa ◽  
A Kawasuso
2004 ◽  
Vol 445-446 ◽  
pp. 57-59 ◽  
Author(s):  
Z.Q. Chen ◽  
Masaki Maekawa ◽  
Takashi Sekiguchi ◽  
Ryoichi Suzuki ◽  
Atsuo Kawasuso

2007 ◽  
Vol 56 (11) ◽  
pp. 6543
Author(s):  
Hao Xiao-Peng ◽  
Wang Bao-Yi ◽  
Yu Run-Sheng ◽  
Wei Long

2012 ◽  
Vol 733 ◽  
pp. 232-235 ◽  
Author(s):  
X.D. Xue ◽  
T. Wang ◽  
J. Jiang ◽  
P.H. Li ◽  
Y.F. Liu ◽  
...  

Hydrogen-induced defects of ZnO single crystals electrochemically charged with hydrogen have been investigated by positron beam-based Doppler broadening spectroscopy, X-ray diffraction (XRD) and optical microscopy (OM). XRD and OM results indicated that a deformation layer was formed due to hydrogen-induced structural change at the subsurface of ZnO single crystal. Slow positron beam measurements showed that this deformation layer contained many defects, such as dislocations and Zn vacancies, which led to increase of S parameter.


2013 ◽  
Vol 113 (4) ◽  
pp. 043506 ◽  
Author(s):  
M. Jiang ◽  
D. D. Wang ◽  
Z. Q. Chen ◽  
S. Kimura ◽  
Y. Yamashita ◽  
...  

2008 ◽  
Vol 607 ◽  
pp. 131-133
Author(s):  
Wen Deng ◽  
Le Huang ◽  
Qi Tao Zhu ◽  
Ya Qin Wei ◽  
Yu Yang Huang

Slow positron beam and coincidence Doppler broadening techniques have been used to follow temperature-induced defects and structural changes in Cz-Si with an initial oxygen content of 1.1×1018 cm-3. Oxygen is recognized as a peak at about 11.85×10-3m0c on the ratio curves. For Cz-Si annealed at 480 oC/15h or 600 oC/15h, the ratio curves show the presence of vacancy-like defects, but they are not associated with oxygen. For Cz-Si annealed at 480 oC/15h, then followed by a 600 oC/15h heat treatment, the ratio curves show the signal of O atom. The ratio curves of Cz-Si, thermally treated by a two-step (480oC/15h + 600oC/15h) pre-annealing, followed by a one-step annealing under different hydrostatic argon pressures and annealed temperatures, also show a peak at 11.85×10-3m0c. The height of the peak varies with different samples. Experimental results indicate that the SiO2 film will form on the surface of Cz-Si after the heat treatment.


2007 ◽  
Vol 4 (10) ◽  
pp. 3646-3649 ◽  
Author(s):  
Z. Q. Chen ◽  
M. Maekawa ◽  
A. Kawasuso ◽  
H. Naramoto

Metals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1689
Author(s):  
Vladimir Slugen ◽  
Jarmila Degmova ◽  
Stanislav Sojak ◽  
Martin Petriska ◽  
Pavol Noga ◽  
...  

New materials for advanced fission/fusion nuclear facilities must inevitably demonstrate resistance to radiation embrittlement. Thermal and radiation ageing accompanied by stress corrosion cracking are dominant effects that limit the operational condition and safe lifetime of the newest nuclear facilities. To study these phenomena and improve the current understanding of various aspects of radiation embrittlement, ion bombardment experiments are widely used as a surrogate for neutron irradiation. While avoiding the induced activity, typical for neutron-irradiated samples, is a clear benefit of the ion implantation, the shallow near-surface region of the modified materials may be a complication to the post-irradiation examination (PIE). However, microstructural defects induced by ion implantation can be effectively investigated using various spectroscopic techniques, including slow-positron beam spectroscopy. This method, typically represented by techniques of positron annihilation lifetime spectroscopy and Doppler broadening spectroscopy, enables a unique depth-profile characterisation of the near-surface region affected by ion bombardment or corrosion degradation. One of the best slow-positron beam facilities is available at the pulsed low-energy positron system (PLEPS), operated at FRM-II reactor in Munich (Germany). Bulk studies (such as high energy ion implantation or neutron irradiation experiments) can be, on the other hand, effectively performed using radioisotope positron sources. In this paper, we outline some basics of the two approaches and provide some recommendations to improve the validity of the positron annihilation spectroscopy (PAS) data obtained on ion-irradiated samples using a conventional 22Na positron source.


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