Effect of growth temperature and post-growth annealing on luminescence properties of molecular beam epitaxy grown single layer Ge quantum dots

2013 ◽  
Vol 113 (6) ◽  
pp. 063101 ◽  
Author(s):  
S. Das ◽  
S. Manna ◽  
R. K. Singha ◽  
R. Aluguri ◽  
S. K. Ray
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Single Layer ◽  
Luminescence Properties ◽  
Ge Quantum Dots

Stacked Layers of C-Induced Ge Quantum Dots

1998 ◽  
Vol 533 ◽  
Author(s):  
O. G. Schmidt ◽  
K. Eberl ◽  
S. Schieker ◽  
N. Y. Jin-Phillipp ◽  
F. Phillipp ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Vertical Alignment ◽  
Strain Fields ◽  
Identical Structure ◽  
Strain Compensation ◽  
Ge Quantum Dots

AbstractFifty layers of carbon-induced germanium dots, separated by 9.6 nm Si, are stacked by solid source molecular beam epitaxy. Each dot layer consists of 0.2 monolayers of pre-deposited carbon and 2.4 monolayers of post-grown Ge. These carbon-induced germanium dots are only 10 to 15 nm in diameter and 1 to 2 nm in height. Vertical alignment due to penetrating strain fields of underlying dot layers is not observed. Unlike to an identical structure without the pre-growth of carbon, a variety of advantageous aspects such as strain compensation, strongly enhanced no-phonon photoluminescence at a wavelength of around 1.3 μm and the possibility of effective waveguiding make this stack of C-induced Ge islands an attractive structure for Si based optoelectronic devices.

Single Hole Charging at Room Temperature of Ge Quantum Dots Grown on Si(001) by Molecular Beam Epitaxy

2009 ◽  
Vol 1 (2) ◽  
pp. 82-86 ◽  
Author(s):  
Rajkumar Singha ◽  
Samaresh Das ◽  
Achintya Dhar ◽  
Samir K. Lahiri ◽  
Samit K. Ray ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Single Hole ◽  
Ge Quantum Dots

scholarly journals Growth and Magnetism of MnxGe1−x Heteroepitaxial Quantum Dots Grown on Si Wafer by Molecular Beam Epitaxy

Crystals ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 534
Author(s):  
Maolong Yang ◽  
Liming Wang ◽  
Jie You ◽  
Lingyao Meng ◽  
Yichi Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Morphological Evolution ◽  
Migration Ability ◽  
Surface Migration ◽  
Ge Matrix ◽  
Formation Conditions ◽  
Si Wafer

Self-assembled MnGe quantum dots (QDs) were grown on Si (001) substrates using molecular beam epitaxy with different growth temperatures and Ge deposition thicknesses to explore the interaction among Mn doping, Ge deposition, the formation of intermetallics, and the ferromagnetism of QDs. With the introduction of Mn atoms, the QDs become large and the density significantly decreases due to the improvement in the surface migration ability of Ge atoms. The growth temperature is one of the most important factors deciding whether intermetallic phases form between Mn and Ge. We found that Mn atoms can segregate from the Ge matrix when the growth temperature exceeds 550 °C, and the strongest ferromagnetism of QDs occurs at a growth temperature of 450 °C. As the Ge deposition thickness increases, the morphology of QDs changes and the ferromagnetic properties decrease gradually. The results clearly indicate the morphological evolution of MnGe QDs and the formation conditions of intermetallics between Mn and Ge, such as Mn5Ge3 and Mn11Ge8.

Growth mode of tensile-strained Ge quantum dots grown by molecular beam epitaxy

2017 ◽  
Vol 50 (46) ◽  
pp. 465301 ◽  
Author(s):  
Z P Zhang ◽  
Y X Song ◽  
Q M Chen ◽  
X Y Wu ◽  
Z Y S Zhu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Mode ◽  
Ge Quantum Dots

Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures

2002 ◽  
Vol 80 (7) ◽  
pp. 1279-1281 ◽  
Author(s):  
M. W. Dashiell ◽  
U. Denker ◽  
C. Müller ◽  
G. Costantini ◽  
C. Manzano ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Ge Quantum Dots

scholarly journals Ge quantum dots encapsulated by AlAs grown by molecular beam epitaxy on GaAs without extended defects

2014 ◽  
Vol 104 (7) ◽  
pp. 073113 ◽  
Author(s):  
Chad A. Stephenson ◽  
Vladimir Protasenko ◽  
William A. O’Brien ◽  
Alexander Mintairov ◽  
Huili (Grace) Xing ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Extended Defects ◽  
Ge Quantum Dots

Optical and structural studies of highly uniform Ge quantum dots on Si (001) substrate grown by solid-source molecular beam epitaxy

2013 ◽  
Vol 378 ◽  
pp. 439-441 ◽  
Author(s):  
Kazuhiro Gotoh ◽  
Ryuji Oshima ◽  
Takeyoshi Sugaya ◽  
Isao Sakata ◽  
Koji Matsubara ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural Studies ◽  
Ge Quantum Dots ◽  
Highly Uniform
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