Super-dense array of Ge quantum dots grown on Si(100) by low-temperature molecular beam epitaxy

2014 ◽  
Vol 115 (14) ◽  
pp. 144306 ◽  
Author(s):  
A. B. Talochkin ◽  
A. A. Shklyaev ◽  
V. I. Mashanov
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Dense Array ◽  
Ge Quantum Dots

Stacked Layers of C-Induced Ge Quantum Dots

1998 ◽  
Vol 533 ◽  
Author(s):  
O. G. Schmidt ◽  
K. Eberl ◽  
S. Schieker ◽  
N. Y. Jin-Phillipp ◽  
F. Phillipp ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Vertical Alignment ◽  
Strain Fields ◽  
Identical Structure ◽  
Strain Compensation ◽  
Ge Quantum Dots

AbstractFifty layers of carbon-induced germanium dots, separated by 9.6 nm Si, are stacked by solid source molecular beam epitaxy. Each dot layer consists of 0.2 monolayers of pre-deposited carbon and 2.4 monolayers of post-grown Ge. These carbon-induced germanium dots are only 10 to 15 nm in diameter and 1 to 2 nm in height. Vertical alignment due to penetrating strain fields of underlying dot layers is not observed. Unlike to an identical structure without the pre-growth of carbon, a variety of advantageous aspects such as strain compensation, strongly enhanced no-phonon photoluminescence at a wavelength of around 1.3 μm and the possibility of effective waveguiding make this stack of C-induced Ge islands an attractive structure for Si based optoelectronic devices.

Single Hole Charging at Room Temperature of Ge Quantum Dots Grown on Si(001) by Molecular Beam Epitaxy

2009 ◽  
Vol 1 (2) ◽  
pp. 82-86 ◽  
Author(s):  
Rajkumar Singha ◽  
Samaresh Das ◽  
Achintya Dhar ◽  
Samir K. Lahiri ◽  
Samit K. Ray ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Single Hole ◽  
Ge Quantum Dots

scholarly journals Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing

2003 ◽  
Vol 93 (10) ◽  
pp. 5953-5958 ◽  
Author(s):  
H. H. Zhan ◽  
R. Nötzel ◽  
G. J. Hamhuis ◽  
T. J. Eijkemans ◽  
J. H. Wolter
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Postgrowth Annealing ◽  
Self Assembled

Growth mode of tensile-strained Ge quantum dots grown by molecular beam epitaxy

2017 ◽  
Vol 50 (46) ◽  
pp. 465301 ◽  
Author(s):  
Z P Zhang ◽  
Y X Song ◽  
Q M Chen ◽  
X Y Wu ◽  
Z Y S Zhu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Mode ◽  
Ge Quantum Dots

Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures

2002 ◽  
Vol 80 (7) ◽  
pp. 1279-1281 ◽  
Author(s):  
M. W. Dashiell ◽  
U. Denker ◽  
C. Müller ◽  
G. Costantini ◽  
C. Manzano ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Ge Quantum Dots

The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy

2006 ◽  
Vol 40 (5) ◽  
pp. 587-591 ◽  
Author(s):  
A. A. Tonkikh ◽  
G. E. Cirlin ◽  
N. K. Polyakov ◽  
Yu. B. Samsonenko ◽  
V. M. Ustinov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Inas Quantum Dots

scholarly journals Ge quantum dots encapsulated by AlAs grown by molecular beam epitaxy on GaAs without extended defects

2014 ◽  
Vol 104 (7) ◽  
pp. 073113 ◽  
Author(s):  
Chad A. Stephenson ◽  
Vladimir Protasenko ◽  
William A. O’Brien ◽  
Alexander Mintairov ◽  
Huili (Grace) Xing ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Extended Defects ◽  
Ge Quantum Dots

Optical and structural studies of highly uniform Ge quantum dots on Si (001) substrate grown by solid-source molecular beam epitaxy

2013 ◽  
Vol 378 ◽  
pp. 439-441 ◽  
Author(s):  
Kazuhiro Gotoh ◽  
Ryuji Oshima ◽  
Takeyoshi Sugaya ◽  
Isao Sakata ◽  
Koji Matsubara ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural Studies ◽  
Ge Quantum Dots ◽  
Highly Uniform
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