Single Hole Charging at Room Temperature of Ge Quantum Dots Grown on Si(001) by Molecular Beam Epitaxy

2009 ◽  
Vol 1 (2) ◽  
pp. 82-86 ◽  
Author(s):  
Rajkumar Singha ◽  
Samaresh Das ◽  
Achintya Dhar ◽  
Samir K. Lahiri ◽  
Samit K. Ray ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Single Hole ◽  
Ge Quantum Dots

Stacked Layers of C-Induced Ge Quantum Dots

1998 ◽  
Vol 533 ◽  
Author(s):  
O. G. Schmidt ◽  
K. Eberl ◽  
S. Schieker ◽  
N. Y. Jin-Phillipp ◽  
F. Phillipp ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Vertical Alignment ◽  
Strain Fields ◽  
Identical Structure ◽  
Strain Compensation ◽  
Ge Quantum Dots

AbstractFifty layers of carbon-induced germanium dots, separated by 9.6 nm Si, are stacked by solid source molecular beam epitaxy. Each dot layer consists of 0.2 monolayers of pre-deposited carbon and 2.4 monolayers of post-grown Ge. These carbon-induced germanium dots are only 10 to 15 nm in diameter and 1 to 2 nm in height. Vertical alignment due to penetrating strain fields of underlying dot layers is not observed. Unlike to an identical structure without the pre-growth of carbon, a variety of advantageous aspects such as strain compensation, strongly enhanced no-phonon photoluminescence at a wavelength of around 1.3 μm and the possibility of effective waveguiding make this stack of C-induced Ge islands an attractive structure for Si based optoelectronic devices.

Growth mode of tensile-strained Ge quantum dots grown by molecular beam epitaxy

2017 ◽  
Vol 50 (46) ◽  
pp. 465301 ◽  
Author(s):  
Z P Zhang ◽  
Y X Song ◽  
Q M Chen ◽  
X Y Wu ◽  
Z Y S Zhu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Mode ◽  
Ge Quantum Dots

Inter-Sub-Level Spectroscopy of P-Type Modulation-Doped Ge Quantum Dots

1999 ◽  
Vol 571 ◽  
Author(s):  
J. L. Liu ◽  
W. G. Wu ◽  
G. Jin ◽  
Y. H. Luo ◽  
S. G. Thomas ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Molecular Beam ◽  
Heavy Hole ◽  
Infrared Detector ◽  
Infrared Range ◽  
Mid Infrared ◽  
Boron Doped ◽  
Ge Quantum Dots ◽  
P Type

ABSTRACTInter-sub-level transitions in p-type modulation-doped Ge quantum dots are observed. The structure is grown by molecular beam epitaxy and consists of 30 periods of Ge quantum dots separated by 6 nm boron-doped Si layers. An absorption peak in the mid-infrared range is observed at room temperature by Fourier transform infrared spectroscopy, and is attributed to the transition between the first two heavy hole states of the Ge quantum dots. This study suggests the possible use of modulation-doped Ge quantum dots for improved infrared detector application.

Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures

2002 ◽  
Vol 80 (7) ◽  
pp. 1279-1281 ◽  
Author(s):  
M. W. Dashiell ◽  
U. Denker ◽  
C. Müller ◽  
G. Costantini ◽  
C. Manzano ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Ge Quantum Dots

Room temperature infrared photoresponse of self assembled Ge/Si (001) quantum dots grown by molecular beam epitaxy

2010 ◽  
Vol 96 (23) ◽  
pp. 233113 ◽  
Author(s):  
R. K. Singha ◽  
S. Manna ◽  
S. Das ◽  
A. Dhar ◽  
S. K. Ray
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Self Assembled

Low-Density InAs Quantum Dots Growth by Molecular Beam Epitaxy

2012 ◽  
Vol 442 ◽  
pp. 12-15
Author(s):  
Zhan Guo Li ◽  
Ming Hui You ◽  
Guo Jun Liu ◽  
Xin Gao ◽  
Lin Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Annealing Temperature ◽  
Layer Growth ◽  
Low Density ◽  
Inas Quantum Dots ◽  
Temperature Growth ◽  
Spacer Layer

We investigate the growth of low-density(~4×108cm-2) InAs quantum dots (QDs) on GaAs by molecular beam epitaxy,with emission wavelength up to 1.3 µm at room temperature were achieved. The QDs density are sensitive to growth temperature,growth rate.The optical properties of the QDs annealing temperature used after spacer layer growth that is attributed to the suppressed In segregation from the QDs into the cap layer, reduced the strain in the QDs,significant decrease of integrated PL intensity was observed as the annealing temperature increases.

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