Low-temperature epitaxial growth of high quality Si1−xGex (x ≥ 0.99) films on Si(001) wafer by reactive thermal chemical vapor deposition
2000 ◽
Vol 147
(12)
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pp. 4652
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2002 ◽
Vol 361
(3-4)
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pp. 189-195
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2012 ◽
Vol 717-720
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pp. 105-108
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2006 ◽
Vol 45
(6A)
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pp. 5329-5331
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1994 ◽
Vol 33
(Part 1, No.1A)
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pp. 240-246
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Keyword(s):
2011 ◽
Vol 65
(7)
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pp. 1127-1130
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