Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack

Hole Mobility ◽

Oxide Semiconductor ◽

Gate Stack ◽

Metal Source

Hole-Mobility and Drive-Current Enhancement in Ge-Rich Strained Silicon–Germanium Wire Tri-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Nickel-Germanosilicide Metal Source and Drain

Applied Physics Express ◽

10.1143/apex.3.124201 ◽

2010 ◽

Vol 3 (12) ◽

pp. 124201 ◽

Cited By ~ 12

Author(s):

Keiji Ikeda ◽

Minoru Oda ◽

Yuuichi Kamimuta ◽

Yoshihiko Moriyama ◽

Tsutomu Tezuka

Keyword(s):

Metal Oxide ◽

Silicon Germanium ◽

Field Effect ◽

Hole Mobility ◽

Oxide Semiconductor ◽

Strained Silicon ◽

Drive Current ◽

Metal Source

Evaluation of Electron and Hole Mobility at Identical Metal–Oxide–Semiconductor Interfaces by using Metal Source/Drain Ge-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c050 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C050 ◽

Cited By ~ 6

Author(s):

Kiyohito Morii ◽

Sanjeewa Dissanayake ◽

Satoshi Tanabe ◽

Ryosho Nakane ◽

Mitsuru Takenaka ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Hole Mobility ◽

Oxide Semiconductor ◽

Metal Source ◽

Semiconductor Interfaces

Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field- Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality

Design, Simulation and Construction of Field Effect Transistors ◽

10.5772/intechopen.74532 ◽

2018 ◽

Author(s):

Dian Lei ◽

Xiao Gong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Gate Stack ◽

Sulfur Passivation

Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2438433 ◽

2015 ◽

Vol 36 (7) ◽

pp. 672-674 ◽

Cited By ~ 15

Author(s):

Tae-Woo Kim ◽

Hyuk-Min Kwon ◽

Seung Heon Shin ◽

Chan-Soo Shin ◽

Won-Kyu Park ◽

...

Keyword(s):

High Pressure ◽

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Gate Stack ◽

Ingaas Quantum Well

Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1921 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 1921-1928 ◽

Cited By ~ 5

Author(s):

Takeo Matsuki ◽

Seiji Inumiya ◽

Nobuyuki Mise ◽

Takahisa Eimori ◽

Yasuo Nara

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Interfacial Reaction ◽

Field Effect ◽

Oxide Semiconductor ◽

High Temperature Annealing ◽

Gate Stack

Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1499213 ◽

2002 ◽

Vol 92 (7) ◽

pp. 3745-3751 ◽

Cited By ~ 145

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Hole Mobility ◽

Oxide Semiconductor ◽

Strained Si ◽

Limited Mobility ◽

Alloy Scattering

Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Journal of Applied Physics ◽

10.1063/1.4939761 ◽

2016 ◽

Vol 119 (2) ◽

pp. 024502 ◽

Cited By ~ 24

Author(s):

Dian Lei ◽

Wei Wang ◽

Zheng Zhang ◽

Jisheng Pan ◽

Xiao Gong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Gate Stack ◽

Sulfur Passivation

Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

Applied Physics Letters ◽

10.1063/1.1423774 ◽

2001 ◽

Vol 79 (25) ◽

pp. 4246-4248 ◽

Cited By ~ 92

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Hole Mobility ◽

Oxide Semiconductor ◽

Strained Si ◽

P Type

Channel direction, effective field, and temperature dependencies of hole mobility in (110)-oriented Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistors fabricated by Ge condensation technique

Journal of Applied Physics ◽

10.1063/1.3537919 ◽

2011 ◽

Vol 109 (3) ◽

pp. 033709 ◽

Cited By ~ 46

Author(s):

Sanjeewa Dissanayake ◽

Yi Zhao ◽

S. Sugahara ◽

Mitsuru Takenaka ◽

Shinichi Takagi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Hole Mobility ◽

Effective Field ◽

Oxide Semiconductor

L$_{\mathrm {g}} = 80$ -nm Trigate Quantum-Well In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2393554 ◽

2015 ◽

Vol 36 (3) ◽

pp. 223-225 ◽

Cited By ~ 24

Author(s):

Tae-Woo Kim ◽

Dong-Hyi Koh ◽

Chan-Soo Shin ◽

Won-Kyu Park ◽

Tommaso Orzali ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Gate Stack